NCE4606

Pb Free Product NCE4606 http://www.ncepower.com N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel ● N-Channel VDS = 30V,ID =6.5A Schematic diagram RDS(ON) < 30mΩ @ VGS=10V ● P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V ● High power and current handing capability Marking and pin assignment ● Lead free product is acquired ● Surface mount package SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 4606 NCE4606 SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 6.5 -7 5.4 -5.8 IDM 30 -30 A PD 2.0 2.0 W TJ,TSTG -55 To 150 -55 To 150 ℃ Continuous Drain Current TA=25℃ ID TA=70℃ Pulsed Drain Current (Note 1) Maximum Power Dissipation TA=25℃ Operating Junction and Storage Temperature Range A Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) RθJA N-Ch 62.5 ℃/W Thermal Resistance,Junction-to-Ambient (Note2) RθJA P-Ch 62.5 ℃/W Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 Pb Free Product NCE4606 http://www.ncepower.com N-CH Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 33 - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.6 3 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A - 20 30 mΩ gFS VDS=5V,ID=6A 15 - - S - 255 - PF - 45 - PF - 35 - PF - 4.5 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=15V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=15V, RL=2.5Ω - 2.5 - nS td(off) VGS=10V,RGEN=3Ω - 14.5 - nS - 3.5 - nS - 13 - nC - 5.5 - nC - 3.5 - nC - 0.8 1.2 V Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=15V,ID=6A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Wuxi NCE Power Semiconductor Co., Ltd Page 2 VGS=0V,IS=6A v1.0 Pb Free Product NCE4606 http://www.ncepower.com P-CH Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 -33 - V Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.5 -1.9 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-6.5A - 28 33 mΩ gFS VDS=-5V,ID=-6.5A 10 - - S - 520 - PF - 100 - PF - 65 - PF - 7.5 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=-15V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V, RL=2.3Ω - 5.5 - nS td(off) VGS=-10V,RGEN=6Ω - 19 - nS - 7 - nS - 9.2 - nC - 1.6 - nC - 2.2 - nC - - -1.2 V Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-15V,ID=-6.5A VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-6.5A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 Pb Free Product NCE4606 http://www.ncepower.com Vdd Rl Vin Vgs Rgen D Vout G S Normalized On-Resistance N- Channel Typical Electrical and Thermal Characteristics (Curves) Figure 1:Switching Test Circuit ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH ID- Drain Current (A) ID- Drain Current (A) Figure 2:Switching Waveforms Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 4 Transfer Characteristics Normalized On-Resistance Rdson On-Resistance(mΩ) Figure 3 Output Characteristics TJ-Junction Temperature(℃) ID- Drain Current (A) Figure 5 Drain-Source On-Resistance Wuxi NCE Power Semiconductor Co., Ltd Page 4 Figure 6 Drain-Source On-Resistance v1.0 Pb Free Product NCE4606 PD Power(W) Rdson On-Resistance(mΩ) http://www.ncepower.com TJ-Junction Temperature(℃) Figure7 Rdson vs Vgs Figure 8 Power Dissipation Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Qg Gate Charge (nC) Figure 10 Source- Drain Diode Forward ID- Drain Current (A) C Capacitance (pF) Figure 9 Gate Charge Vds Drain-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 11 Capacitance vs Vds Wuxi NCE Power Semiconductor Co., Ltd Figure 12 Safe Operation Area Page 5 v1.0 Pb Free Product NCE4606 r(t),Normalized Effective Transient Thermal Impedance http://www.ncepower.com Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 Pb Free Product NCE4606 http://www.ncepower.com -ID- Drain Current (A) Normalized On-Resistance P- Channel Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) -Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature -ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Rdson On-Resistance(Ω) Is- Reverse Drain Current (A) -Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Wuxi NCE Power Semiconductor Co., Ltd Figure 6 Source- Drain Diode Forward Page 7 v1.0 Pb Free Product NCE4606 Normalized BVdss C Capacitance (pF) http://www.ncepower.com TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature Vth (V) Variance ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 8 v1.0 Pb Free Product NCE4606 http://www.ncepower.com SOP-8 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° Wuxi NCE Power Semiconductor Co., Ltd Page 9 v1.0 Pb Free Product http://www.ncepower.com NCE4606 Attention ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 10 v1.0