Pb Free Product
NCE6003M
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
D
The NCE6003M uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
G
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other switching application.
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General Feature
Schematic diagram
● VDS =60V,ID =3.0A
RDS(ON)
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