NCE6003M

厂商：
NCEPOWER(无锡新功率)
封装：
SOT89-3
描述：
N沟道漏源电压(Vdss)：60V 连续漏极电流(Id)：3A 功率(Pd)：1.7W

数据手册：

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数据手册
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NCE6003M 数据手册

Pb Free Product NCE6003M http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S General Feature Schematic diagram ● VDS =60V,ID =3.0A RDS(ON)

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