Pb Free Product
NCE6003Y
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
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Description
The NCE6003Y uses advanced trench technology to provide
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excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other switching application.
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Schematic Diagram
General Features
● VDS =60V,ID =3A
RDS(ON)
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免费人工找货- 国内价格
- 5+0.79996
- 50+0.61852
- 150+0.52780
- 500+0.45976
- 3000+0.40533
- 6000+0.37800
- 国内价格
- 10+0.82550
- 100+0.58960
- 200+0.51600
- 2000+0.46900
- 国内价格
- 10+0.73329
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- 600+0.42144
- 1200+0.41512
- 3000+0.37155
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