NCE6012AS

Pb Free Product NCE6012AS http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) Schematic diagram RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Application Marking and pin assignment ● Power switching application ● Load switch SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE6012AS NCE6012AS SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 12 A ID (100℃) 8.5 A Pulsed Drain Current IDM 120 A Maximum Power Dissipation PD 3 W TJ,TSTG -55 To 150 ℃ RθJA 42 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 Pb Free Product NCE6012AS http://www.ncepower.com Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Typ Max Unit - V - 1 μA - - ±100 nA VDS=VGS,ID=250μA 0.9 1.3 1.8 V VGS=10V, ID=12A - 8.6 11 mΩ VGS=4.5V, ID=6A - 10.3 14 mΩ VDS=5V,ID=12A 40 - - S - 4100 - PF - 298 - PF - 229 - PF - 8.5 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=30V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V, RL=1Ω - 7 - nS td(off) VGS=10V,RGEN=3Ω - 40 - nS - 15 - nS - 93 - nC - 9.7 - nC - 20 - nC - - 1.2 V - - 12 A - 32 - nS - 45 - nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=12A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=12A IS trr TJ = 25°C, IF=12A Qrr di/dt = 100A/μs (Note3) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 Pb Free Product http://www.ncepower.com NCE6012AS Test Circuit 1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 Pb Free Product NCE6012AS http://www.ncepower.com ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(Ω) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Wuxi NCE Power Semiconductor Co., Ltd Figure 6 Source- Drain Diode Forward Page 4 v1.0 Pb Free Product NCE6012AS ID- Drain Current (A) C Capacitance (nF) http://www.ncepower.com TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 Current De-rating Power Dissipation (W) ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 Power De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 Pb Free Product NCE6012AS http://www.ncepower.com SOP-8 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 Pb Free Product http://www.ncepower.com NCE6012AS Attention: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.0