NCE60P25K

厂商：
NCEPOWER(无锡新洁能)
封装：
TO252
描述：
P沟道漏源电压(Vdss)：60V 连续漏极电流(Id)：25A 功率(Pd)：90W

数据手册：

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数据手册
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NCE60P25K 数据手册

Pb Free Product NCE60P25K http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-25A RDS(ON)

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