NCE65T180F

NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super VDS 650 V junction technology and design to provide excellent RDS(ON) RDS(ON) MAX 180 mΩ with low gate charge. This super junction MOSFET fits the ID 21 A industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） Schematic diagram ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Package Marking And Ordering Information Device Device Package Marking NCE65T180 TO-220 NCE65T180 NCE65T180F TO-220F NCE65T180F NCE65T180D TO-263 NCE65T180 Table 1. TO-263 Absolute Maximum Ratings (TC=25℃) Parameter Symbol TO-220 NCE65T180 NCE65T180D TO-220F NCE65T180F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V), AC (f>1 Hz) VGS ±30 V Continuous Drain Current at TC=25°C ID (DC) 21 21* A Continuous Drain Current at TC=100°C ID (DC) 13.2 13.2* A IDM (pluse) 84 84* A PD 188 33.8 W 1.5 0.27 W/°C Pulsed drain current (Note 1) Maximum Power Dissipation(TC=25℃) Derate above 25°C (Note 2) Single pulse avalanche energy (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by TJmax (Note 1) Wuxi NCE Power Co., Ltd Page 1 EAS 441 mJ IAR 10.5 A EAR 0.7 mJ http://www.ncepower.com 1.0 NCE65T180D,NCE65T180,NCE65T180F Parameter Symbol NCE65T180 NCE65T180D NCE65T180F Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD