NCE65T1K2F

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super VDS 650 V junction technology and design to provide excellent RDS(ON) RDS(ON)TYP. 950 mΩ with low gate charge. This super junction MOSFET fits the ID 4 A industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） Schematic diagram ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Package Marking And Ordering Information Device Device Package Marking NCE65T1K2 TO-220 NCE65T1K2 NCE65T1K2D TO-263 NCE65T1K2D NCE65T1K2F TO-220F NCE65T1K2F TO-263 Table 1. TO-220 TO-220F Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65T1K2 NCE65T1K2D NCE65T1K2F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 4 4* A Continuous Drain Current at Tc=100°C ID (DC) 2.5 2.5* A IDM (pluse) 16 16* A PD 41 28.4 W 0.328 0.227 W/°C Pulsed drain current (Note 1) Maximum Power Dissipation(Tc=25℃) Derate above 25°C (Note2) Single pulse avalanche energy (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Wuxi NCE Power Co., Ltd Page 1 EAS 27 mJ IAR 0.7 A EAR 0.1 mJ http://www.ncepower.com v1.0 NCE65T1K2,NCE65T1K2D,NCE65T1K2F Parameter Symbol NCE65T1K2 NCE65T1K2D NCE65T1K2F Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD