NCE65T1K2I

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super VDS 650 V junction technology and design to provide excellent RDS(ON) RDS(ON)TYP. 950 mΩ with low gate charge. This super junction MOSFET fits the ID 4 A industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） Schematic diagram ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Package Marking And Ordering Information Device Device Package Marking NCE65T1K2I TO-251 NCE65T1K2I NCE65T1K2K TO-252 NCE65T1K2K TO-251 Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS VGS Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz) Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C ID (DC) (Note 1) IDM (pluse) Pulsed drain current Maximum Power Dissipation(Tc=25℃) PD TO-252 Table 1. Derate above 25°C (Note2) Single pulse avalanche energy (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Wuxi NCE Power Co., Ltd Page 1 Value Unit 650 V ±30 V 4 A 2.5 A 16 A 41 W 0.328 W/°C EAS 27 mJ IAR 0.7 A EAR 0.1 mJ http://www.ncepower.com V1.0 NCE65T1K2K,NCE65T1K2I Parameter Symbol Value Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD