NCE65T260D,NCE65T260,NCE65T260F
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super
VDS
650
V
junction technology and design to provide excellent RDS(ON)
RDS(ON)TYP
220
mΩ
with low gate charge. This super junction MOSFET fits the
ID
15
A
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction(PFC)
Schematic diagram
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65T260D
TO-263
NCE65T260D
NCE65T260
TO-220
NCE65T260
NCE65T260F
TO-220F
NCE65T260F
TO-263
Table 1.
TO-220
TO-220F
Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
NCE65T260D
NCE65T260
NCE65T260F
Unit
Drain-Source Voltage (VGS=0V)
VDS
650
V
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
VGS
±30
V
Continuous Drain Current
at Tc=25°C
ID (DC)
15
15*
A
Continuous Drain Current
at Tc=100°C
ID (DC)
10
10*
A
IDM (pluse)
60
60*
A
PD
131
33.2
W
1.05
0.265
W/°C
Pulsed drain current
(Note 1)
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
(Note 2)
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
Wuxi NCE Power Co., Ltd
Page 1
EAS
304
mJ
IAR
3
A
EAR
1.6
mJ
http://www.ncepower.com
v1.0
NCE65T260D,NCE65T260,NCE65T260F
Parameter
Symbol
NCE65T260D
NCE65T260
NCE65T260F
Unit
Drain Source voltage slope, VDS ≤480 V,
dv/dt
50
V/ns
Reverse diode dv/dt,VDS ≤480 V,ISD
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