NCE65T360D

NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super VDS 650 V junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 290 mΩ with low gate charge. This super junction MOSFET fits the ID 11.5 A industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant Application ● Power factor correction（PFC） Schematic diagram ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Package Marking And Ordering Information Device Device Package Marking NCE65T360D TO-263 NCE65T360D NCE65T360 TO-220 NCE65T360 NCE65T360F TO-220F NCE65T360F TO-263 Table 1. TO-220 TO-220F Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65T360D NCE65T360 NCE65T360F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V), AC(f>1HZ) VGS ±30 V Continuous Drain Current at TC =25°C ID (DC) 11.5 11.5* A Continuous Drain Current at TC =100°C ID (DC) 7 7* A IDM (pluse) 46 46* A PD 101 32.6 W 0.81 0.26 W/°C Pulsed drain current (Note 1) Maximum Power Dissipation(TC=25℃) Derate above 25°C Single pulse avalanche energy (Note2) (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Wuxi NCE Power Co., Ltd Page 1 EAS 144 mJ IAR 6 A EAR 0.5 mJ http://www.ncepower.com v1.1 NCE65T360D,NCE65T360,NCE65T360F Parameter Symbol NCE65T360D NCE65T360 NCE65T360F Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD