NCE65T540F

NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super VDS 650 V junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 460 mΩ with low gate charge. This super junction MOSFET fits the ID 8 A industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） Schematic diagram ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Package Marking And Ordering Information Device Device Package Marking NCE65T540D TO-263 NCE65T540D NCE65T540 TO-220 NCE65T540 NCE65T540F TO-220F NCE65T540F TO-263 Table 1. TO-220 TO-220F Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65T540D NCE65T540 NCE65T540F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V) AC (f>1 Hz) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 8 8* A Continuous Drain Current at Tc=100°C ID (DC) 5.2 5.2* A IDM (pluse) 32 32* A PD 69 31.6 W 0.55 0.25 W/°C Pulsed drain current (Note 1) Maximum Power Dissipation(Tc=25℃) Derate above 25°C (Note 2) Single pulse avalanche energy (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Wuxi NCE Power Co., Ltd Page 1 EAS 156 mJ IAR 1.7 A EAR 0.3 mJ http://www.ncepower.com Preview NCE65T540D,NCE65T540,NCE65T540F Parameter Symbol NCE65T540D NCE65T540 NCE65T540F Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD