NCE65T900F

NCE65T900D，NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the VDS 650 V RDS(ON)TYP 750 mΩ 5 A ID industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) Schematic diagram ● Uninterruptible Power Supply（UPS） Package Marking And Ordering Information Device Device Package Marking NCE65T900D TO-263 NCE65T900D NCE65T900 TO-220 NCE65T900 NCE65T900F TO-220F NCE65T900F TO-263 Table 1. TO-220 TO-220F Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65T900 NCE65T900D NCE65T900F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V) AC (f>1 Hz) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 5 5* A Continuous Drain Current at Tc=100°C ID (DC) 3 3* A IDM (pluse) 20 20* A PD 46 29 W 0.37 0.23 W/°C Pulsed drain current (Note 1) Maximum Power Dissipation(Tc=25℃) Derate above 25°C (Note2) Single pulse avalanche energy (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Wuxi NCE Power Co., Ltd Page 1 EAS 52 mJ IAR 0.9 A EAR 0.14 mJ http://www.ncepower.com v1.0 NCE65T900D，NCE65T900, NCE65T900F Parameter NCE65T900 NCE65T900D Symbol NCE65T900F Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD