NCE65TF068T

NCE65TF068T N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 62 mΩ gate charge. This super junction MOSFET fits the industry’s ID 53 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） Schematic diagram ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Package Marking And Ordering Information Device Device Package Marking NCE65TF068T TO-247 NCE65TF068T TO-247 Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS VGS Gate-Source Voltage (VDS=0V) AC (f>1 Hz) Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C ID (DC) (Note 1) IDM (pluse) Pulsed drain current Maximum Power Dissipation(Tc=25℃) PD Derate above 25°C (Note 2) Single pulse avalanche energy (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Wuxi NCE Power Semiconductor Co., Ltd Page 1 Value Unit 650 V ±30 V 53 A 33 A 212 A 435 W 3.48 W/°C EAS 1440 mJ IAR 24 A EAR 2 mJ http://www.ncepower.com 1.1 NCE65TF068T Parameter Symbol Value Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD