NCE65TF099T

NCE65TF099T N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super VDS 650 V junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 89 mΩ with low gate charge. This super junction MOSFET fits the ID 38 A industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●Optimized body diode reverse recovery performance ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application Schematic diagram ● Power factor correction（PFC） ● Switched mode power supplies(SMPS)  Intrinsic fast-recovery body diode ● Uninterruptible Power Supply（UPS） ● LLC Half-bridge Package Marking And Ordering Information Device Device Package Marking NCE65TF099T TO-247 NCE65TF099T TO-247 Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS VGS Gate-Source Voltage (VDS=0V) AC (f>1 Hz) Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C ID (DC) (Note 1) IDM (pluse) Pulsed drain current Maximum Power Dissipation(Tc=25℃) PD Derate above 25°C (Note 2) Single pulse avalanche energy Value Unit 650 V ±30 V 38 A 24 A 152 A 322 W 2.58 W/°C EAS 841 mJ IAR 7 A EAR 3.9 mJ (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Wuxi NCE Power Co., Ltd Page 1 http://www.ncepower.com V1.1 NCE65TF099T Parameter Symbol Value Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD