NCE65TF130

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super VDS 650 V junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 110 mΩ with low gate charge. This super junction MOSFET fits the ID 28 A industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●Optimized body diode reverse recovery performance ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application Schematic diagram ● Power factor correction（PFC） ● Switched mode power supplies(SMPS)  Intrinsic fast-recovery body diode ● Uninterruptible Power Supply（UPS） ● LLC Half-bridge Package Marking And Ordering Information Device Device Package Marking NCE65TF130D TO-263 NCE65TF130D NCE65TF130 TO-220 NCE65TF130 NCE65TF130F TO-220F NCE65TF130F TO-263 Table 1. TO-220 TO-220F Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65TF130D NCE65TF130 NCE65TF130F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V) AC (f>1 Hz) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 28 28* A Continuous Drain Current at Tc=100°C ID (DC) 18 18* A IDM (pluse) 112 112* A PD 260 35 W 2.08 0.28 W/°C Pulsed drain current (Note 1) Maximum Power Dissipation(Tc=25℃) Derate above 25°C (Note 2) Single pulse avalanche energy EAS 676 mJ IAR 5.2 A EAR 3.2 mJ (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Wuxi NCE Power Co., Ltd Page 1 http://www.ncepower.com v1.2 NCE65TF130D,NCE65TF130,NCE65TF130F Parameter Symbol NCE65TF130D NCE65TF130 NCE65TF130F Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD