NCE70T900I

NCE70T900I，NCE70T900K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 820 mΩ with low gate charge. This super junction MOSFET fits the ID 5 A industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● Small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant Application ● Power factor correction（PFC） Schematic diagram ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Package Marking And Ordering Information Device Device Package Marking NCE70T900I TO-251 NCE70T900I NCE70T900K TO-252 NCE70T900K TO-251 Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS VGS Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz) Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C ID (DC) (Note 1) IDM (pluse) Pulsed drain current Maximum Power Dissipation(Tc=25℃) PD TO-252 Table 1. Value Unit 700 V ±30 V 5 A 3 A 20 A 46 W 0.37 W/°C EAS 52 mJ IAR 0.9 A EAR 0.14 mJ Symbol Value Unit Derate above 25°C (Note2) Single pulse avalanche energy (Note 1) Avalanche current Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Parameter Wuxi NCE Power Co., Ltd Page 1 http://www.ncepower.com v1.1 NCE70T900I，NCE70T900K Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD