NCE75H21T

Pb Free Product http://www.ncepower.com NCE75H21T NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. GENERAL FEATURES ● VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● ● ● Automotive applications Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-247 top view Package Marking And Ordering Information Device Marking NCE75H21T Device NCE75H21T Device Package TO-247 Reel Size Tape width Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Limit 75 ±20 210 150 850 480 3.2 Unit V V A A A W W/℃ ID ID (100℃) IDM PD Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.1 Pb Free Product http://www.ncepower.com Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note 4) Operating Junction and Storage Temperature Range EAS dv/dt NCE75H21T 2200 5 -55 To 175 mJ V/ns ℃ TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 1) RθJC 0.31 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min 75 2 100 - Typ 3 2.9 4.7 165 12100 2000 480 20 190 130 120 410 90 140 120 860 Max 1 ±200 4 4 6.5 620 140 210 1.2 210 1300 Unit V μA nA V mΩ mΩ S PF PF PF nS nS nS nS nC nC nC V nS nC BVDSS IDSS IGSS VGS(th) 25℃ 125℃ RDS(ON) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr ton VGS=0V ID=250μA VDS=75V,VGS=0V VGS=±20V,VDS=0V VDS=VGS,ID=250μA VGS=10V, ID=40A VDS=25V,ID=40A VDS=25V,VGS=0V, F=1.0MHz VDD=38V,ID=40A VGS=10V,RGEN=1.2Ω (Note2) VDS=60V,ID=40A, VGS=10V(Note2) VGS=0V,IS=40A TJ = 25°C, IF = 40A di/dt = 100A/μs(Note2) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Surface Mounted on FR4 Board, t ≤ 10 sec. 2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%. 3. EAS condition：Tj=25℃,VDD=37.5V,VG=10V,L=2mH,Rg=25Ω,IAS=37A 4. ISD≤125A, di/dt≤260A/μs, VDD≤V(BR)DSS，TJ ≤175°C Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.1 Pb Free Product http://www.ncepower.com NCE75H21T Test circuit 1）EAS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit： Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.1 Pb Free Product http://www.ncepower.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS NCE75H21T ID- Drain Current (A) Normalized On-Resistance Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Is- Reverse Drain Current (A) Figure 5 Gate Charge Rdson On-Resistance(Ω) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.1 Pb Free Product http://www.ncepower.com NCE75H21T C Capacitance (pF) Normalized BVdss Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vth , ( V ) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 r(t),Normalized Effective Transient Thermal Impedance Safe Operation Area Figure 10 VGS(th) vs Junction Temperatur Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.1 Pb Free Product http://www.ncepower.com NCE75H21T TO-247 PACKAGE INFORMATION Symbol A A1 b b1 b2 c c1 D E1 E2 L L1 L2 Φ e H h Dimensions In Millimeters Min 4.850 2.200 1.000 2.800 1.800 0.500 1.900 15.450 3.500REF 3.600REF 40.900 24.800 20.300 7.100 5.450TYP 5.980TYP 0.000 0.300 41.300 25.100 20.600 7.300 Max 5.150 2.600 1.400 3.200 2.200 0.700 2.100 15.750 Dimensions In Inches Min 0.191 0.087 0.039 0.110 0.071 0.020 0.075 0.608 0.138REF 0.142REF 1.610 0.976 0.799 0.280 0.215TYP 0.235 REF 0.000 0.012 1.626 0.988 0.811 0.287 Max 0.200 0.102 0.055 0.126 0.087 0.028 0.083 0.620 Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.1 Pb Free Product http://www.ncepower.com ATTENTION: ■ NCE75H21T ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.1