NCE8205A

Pb Free Product http://www.ncepower.com NCE8205A D1 D2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 G1 G2 Schematic diagram General Features ● VDS = 20V,ID = 6A RDS(ON) < 37.5mΩ @ VGS=2.5V RDS(ON) < 27.5mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management TSSOP-8 top view Package Marking And Ordering Information Device Marking 8205A Device NCE8205A Device Package TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 20 ±10 6 25 1.5 -55 To 150 Unit V V A A W ℃ 83 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=20V,VGS=0V Min 20 Typ Max Unit V 1 μA Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 Pb Free Product http://www.ncepower.com Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD IS VGS=0V,IS=1.7A td(on) tr td(off) tf Qg Qgs Qgd VDS=10V,ID=6A, VGS=4.5V VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω Clss Coss Crss VDS=8V,VGS=0V, F=1.0MHz VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=4.5V, ID=4.5A VGS=2.5V, ID=3.5A VDS=5V,ID=4.5A IGSS VGS=±10V,VDS=0V NCE8205A ±100 0.5 0.7 21 29 10 600 330 140 10 11 35 30 10 2.3 1.5 0.75 1.2 1.7 20 25 70 60 15 1.2 27.5 37.5 nA V mΩ mΩ S PF PF PF nS nS nS nS nC nC nC V A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 Pb Free Product http://www.ncepower.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl D G S Vout td(on) ton tr 90% NCE8205A toff tf 90% td(off) Vin Vgs Rgen VOUT 10% INVERTED 10% 90% VIN 10% 50% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms TJ-Junction Temperature(℃) ID- Drain Current (A） PD Power(W) TJ-Junction Temperature(℃) Figure 3 Power Dissipation Figure 4 Drain Current Rdson On-Resistance(mΩ) ID- Drain Current (A) Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 Pb Free Product http://www.ncepower.com NCE8205A Normalized On-Resistance ID- Drain Current (A) Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Rdson On-Resistance(mΩ) Figure 8 Drain-Source On-Resistance Vgs Gate-Source Voltage (V) C Capacitance (pF) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Is- Reverse Drain Current (A) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 Pb Free Product http://www.ncepower.com NCE8205A ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 13 r(t),Normalized Effective Transient Thermal Impedance Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 Pb Free Product http://www.ncepower.com NCE8205A TSSOP-8 PACKAGE INFORMATION Symbol D E b c E1 A A2 A1 e L H Θ Dimensions In Millimeters Min Max 2.900 3.100 4.300 4.500 0.190 0.300 0.090 0.200 6.250 6.550 1.100 0.800 1.000 0.020 0.150 0.65(BSC) 0.500 0.700 0.25(TYP) 1° 7° Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 Pb Free Product http://www.ncepower.com ATTENTION: ■ NCE8205A ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.0