NCEP0116K

NCEP0116K http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP0116K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features ● VDS =100V,ID =16A RDS(ON)=78mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Marking and pin assignment Application ● LED backlighting ● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP0116K NCEP0116K TO-252-2L Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 16 A ID (100℃) 11.3 A Pulsed Drain Current IDM 64 A Maximum Power Dissipation PD 55 W 0.37 W/℃ EAS 26 mJ Drain Source voltage slope, VDS ≤120 V, dv/dt 50 V/ns Drain Source voltage slope, VDS ≤120 V, ISD