NCEP0218K

NCEP0218K http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP0218K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features ● VDS =200V,ID =18A RDS(ON)=145mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating Application Marking and pin assignment ● LED backlighting ● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP0218K NCEP0218K TO-252 - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V ID 18 A ID (100℃) 12.7 A Pulsed Drain Current IDM 72 A Maximum Power Dissipation PD 140 W 0.93 W/℃ EAS 80 mJ TJ,TSTG -55 To 175 ℃ RθJC 1.07 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Résistance, Junction-to-Case(Note 2) Wuxi NCE Power Co., Ltd Page 1 V1.0 NCEP0218K http://www.ncepower.com Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 200 - - V Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2.5 3.5 4.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=18A - 145 155 mΩ gFS VDS=5V,ID=18A 15 - - S - 483 PF - 42 PF - 1 PF - 4 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=100V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=100V, RL=8Ω - 5 - nS td(off) VGS=10V,RG=3Ω - 10 - nS - 2 - nS - 9.2 - nC - 3.8 - nC - 2.3 - nC - - 1.2 V - - 18 A - 25 - nS - 110 - nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=100V,ID=18A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=18A IS trr TJ = 25°C, IF =18A di/dt = 100A/μs Qrr (Note3) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω Wuxi NCE Power Co., Ltd Page 2 V1.0 http://www.ncepower.com NCEP0218K Test Circuit 1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit Wuxi NCE Power Co., Ltd Page 3 V1.0 NCEP0218K http://www.ncepower.com ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics VGS=10V ID=18 A TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics VDS=50V ID=18A Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 5 Gate Charge VGS=10V Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Figure 2 Transfer Characteristics ID- Drain Current (A) 25°C Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Wuxi NCE Power Co., Ltd 175°C Figure 6 Source- Drain Diode Forward Page 4 V1.0 NCEP0218K C Capacitance (pF) Power Dissipation (W) http://www.ncepower.com TC- Case Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating ID- Drain Current (A) ID- Drain Current (A) Vds Drain-Source Voltage (V) TC-Case Temperature(℃) Figure 8 Safe Operation Area Figure 10 Current De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Co., Ltd Page 5 V1.0 http://www.ncepower.com NCEP0218K TO-252-2L Package Information Wuxi NCE Power Co., Ltd Page 6 V1.0 http://www.ncepower.com NCEP0218K Attention: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Co., Ltd Page 7 V1.0