NCEP035N85GU

NCEP035N85GU http://www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency ● VDS =85V,ID =135A RDS(ON)=2.9mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of ● Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on) and synchronous rectification. ● 150 °C operating temperature ● Pb-free lead plating Application ● DC/DC Converter 100% UIS TESTED! 100% ∆Vds TESTED! ● Ideal for high-frequency switching and synchronous rectification DFN 5X6 Top View Schematic Diagram Bottom View Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity P035N85GU NCEP035N85GU DFN5X6-8L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS 85 V Gate-Source Voltage VGS ±20 V ID 135 A ID (100℃) 97.2 A Pulsed Drain Current IDM 540 A Maximum Power Dissipation PD 160 W 1.28 W/℃ EAS 920 mJ TJ,TSTG -55 To 150 ℃ RθJC 0.78 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) Wuxi NCE Power Co., Ltd Page 1 NCEP035N85GU http://www.ncepower.com Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 85 Zero Gate Voltage Drain Current IDSS VDS=85V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance Typ Max Unit - V - 1 μA - - ±100 nA VDS=VGS,ID=250μA 2 3 4 V RDS(ON) VGS=10V, ID=65A - 2.9 3.5 mΩ gFS VDS=5V,ID=65A 60 - S - 4950 - PF - 850 - PF - 40 - PF - 18 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=40V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=40V,ID=65A - 11 - nS td(off) VGS=10V,RG=3Ω - 38 - nS - 9 - nS - 88 - nC - 22 nC - 25 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=40V,ID=65A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=65A IS trr TJ = 25°C, IF =65A di/dt = 100A/μs Qrr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω Wuxi NCE Power Co., Ltd Page 2 (Note3) - 1.2 V - - 130 A - 72 - nS - 102 - nC NCEP035N85GU http://www.ncepower.com ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 5 Gate Charge Rdson On-Resistance(mΩ) Is- Reverse Drain Current (A) Figure 2 Transfer Characteristics Vsd Source-Drain Voltage (V) ID- Drain Current (A) Figure 6 Source- Drain Diode Forward Figure 3 Rdson- Drain Current Wuxi NCE Power Co., Ltd Page 3 NCEP035N85GU Capacitance (pF) Power Dissipation (W) http://www.ncepower.com TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating ID- Drain Current (A) ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature (℃) Figure 8 Safe Operation Area Figure 10 Current De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Co., Ltd Page 4 http://www.ncepower.com DFN5X6-8L Package Information Wuxi NCE Power Co., Ltd Page 5 NCEP035N85GU http://www.ncepower.com NCEP035N85GU Attention: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Co., Ltd Page 6