NCEP055N85, NCEP055N85D
NCE N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
General Features
● VDS =85V,ID =100A
switching performance. Both conduction and switching power
RDS(ON)=4.8mΩ , typical (TO-220)@ VGS=10V
losses are minimized due to an extremely low combination of
RDS(ON)=4.6mΩ , typical (TO-263)@ VGS=10V
RDS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification.
Application
● DC/DC Converter
●Ideal for high-frequency
switching
and
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
100% UIS TESTED!
100% ∆Vds TESTED!
synchronous
rectification
TO-220
TO-263
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP055N85
NCEP055N85
TO-220
-
-
-
NCEP055N85D
NCEP055N85D
TO-263
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
Parameter
VDS
85
V
Gate-Source Voltage
VGS
±20
V
ID
100
A
ID (100℃)
73.5
A
Pulsed Drain Current
IDM
400
A
Maximum Power Dissipation
PD
125
W
0.83
W/℃
EAS
580
mJ
TJ,TSTG
-55 To 175
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
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NCEP055N85, NCEP055N85D
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.2
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
85
Zero Gate Voltage Drain Current
IDSS
VDS=85V,VGS=0V
-
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
Typ
Max
Unit
-
V
-
1
μA
-
-
±100
nA
2.0
3.0
4.0
V
-
4.8
5.5
mΩ
4.6
5.5
mΩ
60
-
S
-
3600
-
PF
-
570
-
PF
-
30
-
PF
-
18
-
nS
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
TO-220
VGS=10V, ID=50A
gFS
TO-263
VDS=5V,ID=50A
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=40V,VGS=0V,
F=1.0MHz
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=40V,ID=50A
-
55
-
nS
td(off)
VGS=10V,RG=1.6Ω
-
38
-
nS
-
10
-
nS
-
56
-
nC
-
21
nC
-
13
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=40V,ID=50A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=50A
IS
trr
TJ = 25°C, IF = IS
di/dt = 100A/μs
Qrr
(Note3)
-
1.2
V
-
-
100
A
-
64
-
nS
-
130
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω
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NCEP055N85, NCEP055N85D
ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics
VGS=10V
ID=50 A
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-Junction Temperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
VDS=40V
ID=50A
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 5 Gate Charge
VGS=10V
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 2 Transfer Characteristics
ID- Drain Current (A)
25°C
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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175°C
Figure 6 Source- Drain Diode Forward
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Capacitance (pF)
Power Dissipation (W)
NCEP055N85, NCEP055N85D
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
ID- Drain Current (A)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature (℃)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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V1.0
NCEP055N85, NCEP055N85D
TO-220-3L Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
4.400
4.600
0.173
0.181
A1
2.250
2.550
0.089
0.100
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
9.910
10.250
0.390
0.404
E
8.9500
9.750
0.352
0.384
E1
12.650
12.950
0.498
0.510
e
2.540 TYP.
0.100 TYP.
e1
4.980
5.180
0.196
0.204
F
2.650
2.950
0.104
0.116
H
7.900
8.100
0.311
0.319
h
0.000
0.300
0.000
0.012
L
12.900
13.400
0.508
0.528
L1
2.850
3.250
0.112
0.128
V
Φ
Wuxi NCE Power Co., Ltd
6.900 REF.
3.400
0.276 REF.
3.800
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0.150
V1.0
NCEP055N85, NCEP055N85D
TO-263-2L Package Information
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V1.0
NCEP055N85, NCEP055N85D
Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
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