NCEP072N10
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NCE N-Channel Super Trench II Power MOSFET
Description
The NCEP072N10 uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification.
General Features
● VDS =100V,ID =90A
RDS(ON)=6.8mΩ (typical) @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175°C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
100% UIS TESTED!
100% ∆Vds TESTED!
● Ideal for high-frequency switching and synchronous rectification
TO-220
Top View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP072N10
NCEP072N10
TO-220-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
ID
90
A
ID (100℃)
65
A
Pulsed Drain Current
IDM
360
A
Maximum Power Dissipation
PD
125
W
0.83
W/℃
EAS
380
mJ
TJ,TSTG
-55 To 175
℃
RθJC
1.2
℃/W
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
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Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
100
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
-
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
Typ
Max
Unit
-
V
-
1
μA
-
-
±100
nA
VDS=VGS,ID=250μA
2
3
4
V
RDS(ON)
VGS=10V, ID=45A
-
6.8
7.2
mΩ
gFS
VDS=5V,ID=45A
60
-
S
-
3600
-
PF
-
335
-
PF
-
19.5
-
PF
-
17
-
nS
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=50V,VGS=0V,
F=1.0MHz
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=50V,ID=45A,
-
11
-
nS
td(off)
VGS=10V,RG=3Ω
-
36
-
nS
-
9
-
nS
-
60
-
nC
-
20
nC
-
15
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=50V,ID=45A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=45A
IS
trr
TJ = 25°C, IF =45A
di/dt = 100A/μs
Qrr
(Note3)
-
1.2
V
-
-
90
A
-
62
-
nS
-
109
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Co., Ltd
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ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics
Figure 4 Rdson-Junction Temperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Vgs Gate-Source Voltage (V)
VDS=50V
ID=45A
Qg Gate Charge (nC)
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Figure 2 Transfer Characteristics
Rdson On-Resistance(mΩ)
ID=45A
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
VGS=10V
ID- Drain Current (A)
175°C
25°C
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Wuxi NCE Power Co., Ltd
VGS=10V
Figure 6 Source- Drain Diode Forward
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NCEP072N10
Capacitance (pF)
Power Dissipation (W)
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TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
ID- Drain Current (A)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature (℃)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Co., Ltd
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NCEP072N10
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TO-220-3L Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
4.400
4.600
0.173
0.181
A1
2.250
2.550
0.089
0.100
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
9.910
10.250
0.390
0.404
E
8.9500
9.750
0.352
0.384
E1
12.650
12.950
0.498
0.510
e
2.540 TYP.
0.100 TYP.
e1
4.980
5.180
0.196
0.204
F
2.650
2.950
0.104
0.116
H
7.900
8.100
0.311
0.319
h
0.000
0.300
0.000
0.012
L
12.900
13.400
0.508
0.528
L1
2.850
3.250
0.112
0.128
V
Φ
Wuxi NCE Power Co., Ltd
6.900 REF.
3.400
0.276 REF.
3.800
Page 5
0.134
0.150
V1.0
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NCEP072N10
Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Co., Ltd
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