NCEP078N10G

NCEP078N10G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and General Features ● VDS =100V,ID =75A RDS(ON)=7.4mΩ , typical@ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! synchronous rectification DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity P078N10G NCEP078N10G DFN5X6-8L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 75 A ID (100℃) 54 A Pulsed Drain Current IDM 300 A Maximum Power Dissipation PD 100 W 0.8 W/℃ EAS 387 mJ TJ,TSTG -55 To 150 ℃ RθJC 1.25 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 4) Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Case Wuxi NCE Power Co., Ltd Page 1 http://www.ncepower.com V3.0 NCEP078N10G Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance Typ Max Unit - V - 1 μA - - ±100 nA VDS=VGS, ID=250μA 2.0 3.0 4.0 V RDS(ON) VGS=10V, ID=37.5A - 7.4 7.8 mΩ gFS VDS=5V,ID=37.5A 60 - S - 3070 - pF - 290 - pF - 23 - pF - 15 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note3) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=50V,VGS=0V, F=1.0MHz Crss (Note 3) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=50V,ID=37.5A - 10 - nS td(off) VGS=10V,RG=1.6Ω - 34 - nS - 8 - nS - 53 - nC - 18 - nC - 16 - nC - - 1.2 V - - 75 A TJ = 25°C, IF = 37.5A - 60 - nS di/dt = 100A/μs - 106 - nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=50V,ID=37.5A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 2) VSD Diode Forward Current IS Reverse Recovery Time trr Reverse Recovery Charge VGS=0V,IS=37.5A Qrr (Note3) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 3. Guaranteed by design, not subject to production 4. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.25mH,Rg=25Ω Wuxi NCE Power Co., Ltd Page 2 http://www.ncepower.com V3.0 NCEP078N10G ID- Drain Current (A) Vgs Gate-Source Voltage (V) Typical Electrical and Thermal Characteristics ID=37.5 A Vds Drain-Source Voltage (V) Qg Gate Charge (nC) Figure 1 Output Characteristics Figure 4 Gate Charge ID- Drain Current (A) Is- Reverse Drain Current (A) VDS=5V Vgs Gate-Source Voltage (V) 150°C 25°C Vsd Source-Drain Voltage (V) Figure 2 Transfer Characteristics Figure 5 Source- Drain Diode Forward VGS=10V Capacitance (pF) Rdson On-Resistance(mΩ) VDS=50V ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 3 Rdson- Drain Current Wuxi NCE Power Co., Ltd Figure 6 Capacitance vs Vds Page 3 http://www.ncepower.com V3.0 Power Dissipation (W) ID- Drain Current (A) NCEP078N10G TA-Junction Temperature (°C) Figure 7 Power De-rating Figure 9 Current De-rating ID- Drain Current (A) Normalized On-Resistance TA-Junction Temperature(°C) ID=37.5A Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area TJ-Junction Temperature(℃) r(t),Normalized Effective Transient Thermal Impedance Figure 10 Rdson-Junction Temperature Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Co., Ltd Page 4 http://www.ncepower.com V3.0 NCEP078N10G DFN5X6-8L Package Information Wuxi NCE Power Co., Ltd Page 5 http://www.ncepower.com V3.0 NCEP078N10G Attention: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Co., Ltd Page 6 http://www.ncepower.com V3.0