NCEP1520

NCEP1520 http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP1520 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features ● VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating Marking and pin assignment ● 100% UIS tested Application ● LED backlighting ● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP1520 NCEP1520 TO-220-3L - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V ID 20 A ID (100℃) 14 A Pulsed Drain Current IDM 80 A Maximum Power Dissipation PD 68 W 0.45 W/℃ EAS 65 mJ Drain Source voltage slope, VDS ≤120 V, dv/dt 50 V/ns Drain Source voltage slope, VDS ≤120 V, ISD