NCEP30T19G

Pb Free Product NCEP30T19G http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =30V,ID =185A Schematic Diagram RDS(ON)=1.1mΩ (typical) @ VGS=10V RDS(ON)=1.45mΩ (typical) @ VGS=4.5V D D S S D D D D D D ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application S G G S Top View S S Bottom View ● DC/DC Converter 100% UIS TESTED! ● Ideal for high-frequency switching and synchronous rectification 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP30T19G NCEP30T19G DFN5X6-8L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID 185 A ID (100℃) 140 A Pulsed Drain Current (Package Limited) IDM 400 A Maximum Power Dissipation PD 95 W 0.76 W/℃ EAS 1300 mJ TJ,TSTG -55 To 150 ℃ Drain Current-Continuous (Silicon Limited) Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Wuxi NCE Power Co., Ltd Page 1 V1.0 Pb Free Product NCEP30T19G http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.32 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Typ Max Unit - V - 1 μA - - ±100 nA VDS=VGS,ID=250μA 1.0 1.5 2.0 V VGS=10V, ID=95A - 1.1 1.4 mΩ VGS=4.5V, ID=95A - 1.45 1.8 mΩ VDS=5V,ID=95A 90 - - S - 7350 8800 PF - 1930 2300 PF - 110 130 PF - 15 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=15V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=15V,ID=95A - 10 - nS td(off) VGS=10V,RG=3Ω - 51 - nS - 12 - nS - 125 140 nC - 18 nC - 13 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=15V,ID=95A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=95A IS - 1.2 V 185 A - 38 nS - 126 nC - trr TJ = 25°C, IF = IS di/dt = 100A/μs Qrr (Note3) - Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω Wuxi NCE Power Co., Ltd Page 2 V1.0 Pb Free Product NCEP30T19G http://www.ncepower.com ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 5 Gate Charge Rdson On-Resistance(mΩ) Is- Reverse Drain Current (A) Figure 2 Transfer Characteristics ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Wuxi NCE Power Co., Ltd Figure 6 Source- Drain Diode Forward Page 3 V1.0 Pb Free Product NCEP30T19G Capacitance (pF) Power Dissipation (W) http://www.ncepower.com TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating ID- Drain Current (A) ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature (℃) Figure 8 Safe Operation Area Figure 10 Current De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Co., Ltd Page 4 V1.0 Pb Free Product http://www.ncepower.com NCEP30T19G DFN5X6-8L Package Information Wuxi NCE Power Co., Ltd Page 5 V1.0 Pb Free Product http://www.ncepower.com NCEP30T19G Attention: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Co., Ltd Page 6 V1.0