NCEP40PT15G
http://www.ncepower.com
NCE P-Channel Super Trench Power MOSFET
Description
General Features
The NCEP40PT15G uses Super Trench technology that is
● VDS =-40V,ID =-150A
uniquely optimized to provide the most efficient high frequency
RDS(ON)=2.8mΩ (typical) @ VGS=-10V
switching performance. Both conduction and switching power
RDS(ON)=3.8mΩ (typical) @ VGS=-4.5V
losses are minimized due to an extremely low combination of
● Excellent gate charge x RDS(on) product(FOM)
RDS(ON) and Qg. This device is ideal for high-frequency switching
● Very low on-resistance RDS(on)
and synchronous rectification.
● 150 °C operating temperature
Application
●DC/DC Converter
●Ideal for high-frequency
● Pb-free lead plating
● 100% UIS tested
switching
and
100% UIS TESTED!
100% ΔVds TESTED!
synchronous
rectification
DFN 5X6
Top View
Schematic Diagram
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP40PT15G
NCEP40PT15G
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous (TC=25℃)
ID (TC=25℃)
-150
A
Drain Current-Continuous(TC=100℃)
ID (TC=100℃)
-106
A
Drain Current-Continuous (TA=25℃)
ID (TA=25℃)
-20.5
A
IDM
-600
A
Maximum Power Dissipation(TC=25℃)
PD(TC=25℃)
150
W
Maximum Power Dissipation(TA=25℃)
PD(TA=25℃)
2.5
W
1.2
W/℃
EAS
1076
mJ
TJ,TSTG
-55 To 150
℃
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.83
℃/W
Thermal Resistance,Junction-to-Ambient
RθJA
50
℃/W
Pulsed Drain Current
(Note 1)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
Thermal Characteristic
(Note 2)
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Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-40
Zero Gate Voltage Drain Current
IDSS
VDS=-40V,VGS=0V
-
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Typ
Max
Unit
-
V
-
1
μA
-
-
±100
nA
VDS=VGS,ID=-250μA
-1.0
-1.5
-2.2
V
VGS=-10V, ID=-75A
-
2.8
3.5
mΩ
VGS=-4.5V, ID=-75A
-
3.9
6.0
mΩ
RG
F=1.0MHz
-
5.5
-
Ω
gFS
VDS=-5V,ID=-75A
-
30
-
S
-
8940
-
PF
-
1900
-
PF
-
45
-
PF
-
18
-
nS
Off Characteristics
On Characteristics (Note 3)
Gate resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=-20V,VGS=0V,
F=1.0MHz
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-20V,ID=-75A
-
13
-
nS
td(off)
VGS=-10V,RG=1.6Ω
-
90
-
nS
-
15
-
nS
-
104.4
-
nC
-
20.8
nC
-
13.5
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-20V,ID=-75A,
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=-75A
IS
-
trr
Qrr
-
-1.2
V
-150
A
TJ = 25°C, IF =-75A
-
35
nS
di/dt = 100A/μs
-
85
nC
(Note3)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any
given application depends on the user's specific board design.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=-20V,VG=-10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Co., Ltd
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-ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics
-Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 4 Rdson-JunctionTemperature
-ID- Drain Current (A)
-Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Rdson On-Resistance(mΩ)
Is- Reverse Drain Current (A)
-Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Wuxi NCE Power Co., Ltd
Figure 6 Source- Drain Diode Forward
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NCEP40PT15G
Capacitance (pF)
Power Dissipation (W)
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TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
-ID- Drain Current (A)
-ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature (℃)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
r(t),Normalized Effective
Transient Thermal Impedance
-Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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NCEP40PT15G
DFN5X6-8L Package Information
Wuxi NCE Power Co., Ltd
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NCEP40PT15G
Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
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with some probability. It is possible that these probabilistic failures could give rise to accidents or
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Any and all information described or contained herein are subject to change without notice due to
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product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
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