1SS303

DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES • • • • Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use. PACKAGE DIMENSIONS (Unit: mm) 2.1±0.1 1.25±0.1 0.65 0.65 ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Currents (TA = 25°C) Peak Reverse Voltage DC Reverse Voltage Surge Current (1 µs) Surge Current (1 µs) Peak Forward Current Peak Forward Current Average Rectified Current Average Rectified Current Maximum Temperatures Junction Temperature Storage Temperature Range Thermal Resistance Junction to Ambient Junction to Ambient Note Both diodes loaded simultaneously. Note Note Note Note VR IFSM IFSM IFM IFM IO IO 50 6.0 4.0 450 300 150 100 V 0.3 A 0.9±0.1 Marking mA mA mA mA CONNECTION DIAGRAM (Top View) Tj Tstg 150 –55 to + 150 °C °C 2 3 1. Cathode 2. Cathode 3. Anode Marking : A4 Rth(j-a) Rth(j-a) 1.0 0.85 °C/mW °C/mW 1 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Forward Voltage SYMBOL VF1 VF2 VF3 Reverse Current Capacitance Reverse Recovery Time IR Ct trr TEST CONDITIONS IF = 10 mA IF = 50 mA IF = 100 mA VR = 50 V VR = 0 V, f = 1.0 MHz See Test Circuit. 2.5 MIN. TYP. 0.72 0.88 1.0 MAX. 1.0 1.1 1.2 0.1 4.0 4.0 UNIT V V V 0 to 0.1 µA pF ns The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16308EJ2V0DS00 (2nd edition) (Previous No. DC-2100) Date Published July 2002 NS CP(K) Printed in Japan 0.15+0.1 −0.05 A 0.3+0.1 −0 VRM 75 V 2.0±0.2 0.3+0.1 −0 2 3 1 © 1987 1SS303 TYPICAL ELECTRICAL CURVES (TA = 25°C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 50 20 100 50 20 10 5 2 1 0.5 REVERSE CURRENT vs. REVERSE VOLTAGE IF - Forward Current - mA 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 IR - Reverse Current - µA 0.2 0 10 20 30 40 50 VR - Reverse Voltage - V VF - Forward Voltage - V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 20 10 Ct - Terminal Capacitance - pF REVERSE RECOVERY TIME vs. FORWARD CURRENT 20 5 trr - Reverse Recovery Time - ns 16 12 2 1 0.5 8 4 0.2 0.1 0.5 1 2 5 10 20 50 VR - Reverse Voltage - V 100 0 20 40 60 80 IF - Forward Current - mA 100 2 Data Sheet D16308EJ2V0DS 1SS303 REVERSE RECOVERY TIME (trr) TEST CIRCUIT Trigger Pulse Generator (50 Ω) DC Source Input Voltage Waveform to Diode 0 VF VR Ir 0 IF Output Current Waveform in Diode 0.02 µF D.U.T. Sampling Oscilloscope (50 Ω) 0.1• Ir + 3 kΩ − IF = 10 mA, VR = 6.0 V, RL = 100 Ω irr = 0.1• Ir trr Data Sheet D16308EJ2V0DS 3 1SS303 • The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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