2SA1649-Z

DATA SHEET SILICON POWER TRANSISTOR 2SA1649, 2SA1649-Z PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. PACKAGE DRAWING (UNIT: mm) FEATURES • Available for high-current control in small dimension • Z type is a lead processed product and is deal for mounting a hybrid IC. • Mold package that does not require an insulating board or insulation bushing • Low collector saturation voltage: VCE(sat) = −0.3 V MAX. (@IC = −3 A) • Fast switching speed: tf = 0.3 µs MAX. (@IC = −3 A) • High DC current amplifiers and excellent linearity ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25 °C) PT (Ta = 25 °C) Tj Tstg Ratings −40 −30 −7.0 −10 −20 −3.5 15 1.0**, 2.0*** 150 −55 to +150 Unit V V V A A A W W °C °C (OHFWURGH &RQQHFWLRQ  %DVH  &ROOHFWRU  (PLWWHU  )LQ FROOHFWRU *: PW ≤ 300 µs, duty cycle ≤ 10% **: Printing board mounted 2 ***: 7.5 mm × 0.7 mm ceramic board mounted The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15588EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1649, 2SA1649-Z ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector to emitter voltage Collector to emitter voltage Collector cutoff current Collector cutoff current Collector cutoff current Collector cutoff current Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Collector saturation voltage Base saturation voltage Base saturation voltage Collector capacitance Gain bandwidth product Turn-on time Storage time Fall time Symbol VCEO(SUS) VCEX(SUS) ICBO ICER ICEX1 ICEX2 IEBO hFE1* hFE2* hFE3* VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2* Cob fT ton tstg tf Conditions IC = −4.0 A, IB = −0.4 A, L = 1 mH IC = −4.0 A, IB2 = −IB1 = −0.4 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped VCE = −30 V, IE = 0 VCE = −30 V, RBE = 50 Ω, Ta = 125°C VCE = −30 V, VBE(OFF) = 1.5 V VCE = −30 V, VBE(OFF) = 1.5 V, Ta = 125°C VEB = −5.0 V, IC = 0 VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −2.0 A VCE = −2.0 V, IC = −4.0 A IC = −3.0 A, IB = −0.2 A IC = −4.0 A, IB = −0.3 A IC = −3.0 A, IB = −0.2 A IC = −4.0 A, IB = −0.3 A VCB = −10 V, IE = 0, f = 1.0 MHz VCE = −10 V, IC = −0.5 A IC = −4.0 A, RL = 5 Ω, IB1 = −IB2 = −0.15 A, VCC ≅ −20 V Refer to the test circuit. 250 120 0.3 1.5 0.3 100 100 60 −0.3 −0.5 −1.2 −1.5 200 400 MIN. −30 −40 −10 −1.0 −10 −1.0 −10 TYP. MAX. Unit V V µA mA µA mA µA − − − V V V V pF MHz µs µs µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pulsed h)( CLASSIFICATION Marking hFE2 M 100 to 200 L 150 to 300 K 200 to 400 SWITCHING TIME (tRQ, tVWJ, tI) TEST CIRCUIT %DVH FXUUHQW ZDYHIRUP &ROOHFWRU FXUUHQW ZDYHIRUP 2 Data Sheet D15588EJ2V0DS 2SA1649, 2SA1649-Z TYPICAL CHARACTERISTICS (Ta = 25°C) Data Sheet D15588EJ2V0DS 3 2SA1649, 2SA1649-Z 4 Data Sheet D15588EJ2V0DS 2SA1649, 2SA1649-Z [MEMO] Data Sheet D15588EJ2V0DS 5 2SA1649, 2SA1649-Z • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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