2SA1742

DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. ORDERING INFORMATION Part No. 2SA1742 Package Isolated TO-220 (Isolated TO-220) FEATURES • High hFE and low VCE(sat): hFE ≥ 100 MIN. @VCE = −2.0 V, IC = −1.5 A VCE(sat) ≥ −0.3 V MAX. @IC = −4.0 V, IB = −0.2 A • Full-mold package that does not require an insulating board or bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 300 µs, duty cycle ≤ 10% Conditions Ratings −100 −60 −7.0 −7.0 −14 −3.5 30 2.0 150 −55 to +150 Unit V V V A A A W W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14858EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1742 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Collector to emitter voltage Symbol VCEO(SUS) VCEX(SUS) Collector cutoff current ICBO ICER ICEX1 ICEX2 Emitter cutoff current DC current gain IEBO hFE1 hFE2 hFE3 Collector saturation voltage Base saturation voltage Collector capacitance Gain bandwidth product Turn-on time Storage time Fall time VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Cob fT ton tstg tf Conditions IC = −4.0 V, IB = −0.4 A, L = 1 mH IC = −4.0 A, IB1 = −IB2 = −0.4 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped VCB = −60 V, IE = 0 A VCE = −60 V, RBE = 50 Ω, TA = 125°C VCE = −60 V, VBE(OFF) = 1.5 V VCE = −60 V, VBE(OFF) = 1.5 V, TA = 125°C VEB = −5.0 V, IC = 0 A VCE = −2.0 V, IC = −0.7 ANote VCE = −2.0 V, IC = −1.5 ANote VCE = −2.0 V, IC = −4.0 ANote IC = −4.0 A, IB = −0.2 ANote IC = −6.0 A, IB = −0.3 ANote IC = −4.0 A, IB = −0.2 ANote IC = −6.0 A, IB = −0.3 ANote VCB = −10 V, IE = 0 A, f = 1.0 MHz VCB = −10 V, IC = −1.0 A IC = −4.0 A, RL = 12.5 Ω, IB1 = −IB2 = −0.2 A, VCC ≅ −50 V Refer to the test circuit. 180 40 0.3 1.5 0.3 100 100 60 −0.3 −0.5 −1.2 −1.5 V V V V pF MHz µs 400 MIN. −60 −60 −10 −1.0 −10 −1.0 −10 TYP. MAX. Unit V V µA mA µA mA µA µs µs Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking hFE2 M 100 to 200 L 150 to 300 K 200 to 400 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 Data Sheet D14858EJ2V0DS 2SA1742 TYPICAL CHARACTERISTICS (TA = 25°C) Total Power Dissipation PT (W) Case Temperature TC (°C) Derating dT (%) Case Temperature TC (°C) Collector Current IC (A) Collector current IC (A) Collector Current IC (A) Collector to Emitter Voltage VCE (V) Single pulse Collector to Emitter Voltage VCE (V) Transient Thermal Resistance rth(t) (°C/W) Without heatsink With infinite heatsink Pulse Width PW (s) Data Sheet D14858EJ2V0DS 3 4 Collector Capacitance Cob (pF) Collector Current IC (A) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Collector Current IC (A) Collector to Emitter Voltage VCE (V) Collector to Base Voltage VCB (V) Gain Bandwidth Product fT (MHz) Pulse test Data Sheet D14858EJ2V0DS Fall Time tf (µs) StorageTime tstg (µs) Turn-On Time ton (µs) DC Current Gain hFE Collector Current IC (A) Collector Current IC (A) Collector Current IC (A) Pulse test 2SA1742 2SA1742 PACKAGE DRAWING (UNIT: mm) Electrode Connection 1. Base 2. Collector 3. Emitter Data Sheet D14858EJ2V0DS 5 2SA1742 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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