2SA1847

DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES • Auto-mount possible in radial taping specifications • Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions • High hFE and low VCE(sat): VCE(sat) = −0.3 V MAX. @IC = −6.0 V, IB = −0.3 A hFE ≥ 100 • Fast switching speed @VCE = −2.0 V, IC = −2.0 A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Ta = 25°C PW ≤ 300 µs, duty cycle ≤ 2% Conditions Ratings −150 −100 −7.0 −10 −20 −6.0 1.8 150 −55 to +150 Unit V V V A A A W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15593EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SA1847 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Collector cutoff current Symbol ICBO ICER Conditions VCB = −100 V, IE = 0 VCE = −100 V, REB = 50 Ω Ta = 125°C VCE = −100 V, VBE(off) = 1.5 V VCE = −100 V, VBE(off) = 1.5 V Ta = 125°C VEB = −5.0 V, IC = 0 VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −2.0 A VCE = −2.0 V, IC = −6.0 A IC = −6.0 A, IB = −0.3 A IC = −8.0 A, IB = −0.4 A IC = −6.0 A, IB = −0.3 A IC = −8.0 A, IB = −0.4 A VCE = −10 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz IC = −6.0 A IB1 = −IB2 = −0.3 A RL = 8.3 Ω, VCC = −50 V 150 250 0.3 1.5 0.4 100 100 60 −0.3 −0.5 −1.2 −1.5 400 MIN. TYP. MAX. −10 −1.0 −10 −1.0 −10 Unit µA mA Collector cutoff current Collector cutoff current ICEX1 ICEX2 µA mA Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Collector saturation voltage Base saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Turn-on time Storage time Fall time IEBO hFE1* hFE2* hFE3* VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2* fT Cob ton tstg tf µA − − − V V V V MHz pF µs µs µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking hFE M 100 to 200 L 150 to 300 K 200 to 400 PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION Electrode Connection 1. Base 2. Collector 3. Emitter 2 Data Sheet D15593EJ2V0DS 2SA1847 TYPICAL CHARACTERISTICS (Ta = 25°C) Total Power Dissipation PT (W) Ambient Temperature Ta (°C) IC Derating dT (%) Ambient Temperature Ta (°C) Single pulse Transient Thermal Resistance rth(j-a)(t) (°C/W) Collector Current IC (A) Collector to Emitter Voltage VCE (V) Pulse Width PW (s) Pulse test Collector Current IC (A) DC Current Gain hFE Collector to Emitter Voltage VCE (V) Collector Current IC (A) Data Sheet D15593EJ2V0DS 3 4 Turn-On Time ton (µs) Storage Time tstg (µs) Fall Time tf (µs) Gain Bandwidth Product fT (MHz) Collector Saturation Voltage VCE(sat) (V) Collector Current IC (A) Collector Current IC (A) Pulse test Collector Current IC (A) Collector Capacitance Cob (pF) Data Sheet D15593EJ2V0DS Base Saturation Voltage VBE(sat) Collector Current IC (A) Collector to Base Voltage VCB (V) Pulse test 2SA1847 2SA1847 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT %DVH FXUUHQW ZDYHIRUP &ROOHFWRU FXUUHQW ZDYHIRUP Data Sheet D15593EJ2V0DS 5 2SA1847 • The information in this document is current as of July, 2001. 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