2SA1871

DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed highvoltage switching and is ideal for use in switching elements such as switching regulators and DC/DC converters. PACKAGE DRAWING (UNIT: mm) FEATURES • New package with dimensions in between those of small signal and power signal package • High voltage • Fast switching speed • Complementary transistor with 2SC4942 QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. Electrode connection 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg PW ≤ 10 ms, duty cycle ≤ 50 % 7.5 cm × 0.7 mm ceramic board used 2 Conditions Ratings −600 −600 −7.0 −1.0 −2.0 2.0 150 −55 to +150 Unit V V V A A W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16144EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SA1871 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf °& Conditions MIN. TYP. MAX. –10 –10 30 5 60 20 –0.3 –0.85 30 40 0.1 3.5 0.1 0.5 5.0 0.5 –1.0 –1.2 120 Unit VCB = −600 V, IE = 0 VEB = −7.0 V, IC = 0 VCE = −5.0 V, IC = −0.1 A VCE = −5.0 V, IC = −0.5 A IC = −300 mA, IB = −60 mA IC = −300 mA, IB = −60 mA VCE = −10 V, IE = 50 mA VCB = −10 V, IE = 0, f = 1.0 MHz IC = −0.5 A, VCC = −250 V IB1 = −IB2 = −0.1 A, RL = 500 Ω, µA µA – – V V MHz pF µs µs µs KFE &/$66,),&$7,21 Marking hFE1 GA1 30 to 60 GA2 40 to 80 GA3 60 to 120 7