2SB1572

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1572 PNP SILICON EPITAXIAL TRANSISTOR FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.4 V • Complementary to 2SD2403 PACKAGE DRAWING (Unit: mm) 4.5±0.1 1.6±0.2 1.5±0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −80 Collector to Emitter Voltage VCEO −60 Emitter to Base Voltage VEBO −6.0 Collector Current (DC) IC(DC) −3.0 Note1 Collector Current (pulse) IC(pulse) −5.0 Base Current (DC) IB(DC) −0.2 Note1 Base Current (pulse) IB(pulse) −0.4 Note2 Total Power Dissipation PT 2.0 Junction Temperature Tj 150 Storage Temperature Range Tstg –55 to + 150 Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. When mounted on ceramic substrate of 16 cm x 0.7 mm V V V A A A A W °C °C 0.8 MIN. E 0.42 ±0.06 1.5 C B 0.47 ±0.06 3.0 0.42 ±0.06 0.41 +0.03 –0.05 E: Emitter C: Collector (Fin) B: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Note SYMBOL ICBO IEBO hFE1 hFE2 TEST CONDITIONS VCB = −80 V, IE = 0 VEB = −6.0 V, IC = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −0.1 A IC = −2.0 A, IB = −0.1 A IC = −3.0 A, IB = −0.15 A IC = −2.0 A, IB = −0.1 A VCE = −10 V, IE = 0.3 A VCB = −10 V, IE = 0, f = 1.0 MHz IC = −1.0 A, VCC = −10 V, RL = 5.0 Ω, IB1 = −IB2 = −0.1 A, MIN. TYP. MAX. −100 −100 UNIT nA nA − 80 100 −0.63 200 −0.685 −0.2 −0.3 −0.89 160 45 155 510 35 400 −0.73 −0.4 −0.6 −1.2 − V V V V MHz pF ns ns ns Base to Emitter Voltage Note Note Note VBE VCE(sat)1 VCE(sat)2 VBE(sat) fT Cob ton tstg tf Collector Saturation Voltage Collector Saturation Voltage Base Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time Note Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% hFE CLASSFICATION Marking hFE2 HX 100 to 200 HY 160 to 320 HZ 200 to 400 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11204EJ3V0DS00 (3rd edition) Date Published July 2001 NS CP(K) Printed in Japan 4.0±0.25 2.5±0.1 © 2001 2SB1572 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 FORWARD BIAS SAFE OPERATING AREA −10 −5 −2 −1 10 0 dT - Percentage of Rated Power - % IC - Collector Current - A 80 PW 60 = 1 s m 10 m s 40 −0.5 −0.2 −0.1 −1 m s DC 20 TA = 25˚C Single Pulse −2 −5 −10 −20 −50 −100 VCE - Collector to Emitter Voltage - V 0 30 60 90 120 150 TA - Ambient Temperature - ˚C −2.0 IC - Collector Current - A COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE m 0 −4 mA −1.2 −0.8 −0.4 IB = −10 mA IC - Collector Current - A −1.6 −5 A 0m A −3 20 m − −10 −5 −2 −1 −0.5 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = −2 V 0 A =1 25˚ C 75˚ C −0.2 −0.1 −0.05 −0.02 −0.01 −0.005 −0.002 −0.001 −300 0 −0.2 −0.4 −0.6 −0.8 −1.0 −500 −700 –25˚C 25˚C 0˚C TA −900 −1100 VCE - Collector to Emitter Voltage - V VBE - Base to Emitter Voltage - mV DC CURRENT GAIN vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - mV COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT −1000 −500 −200 −100 IC = 20 . IB 1000 VCE = −2 V hFE - DC Current Gain 100 TA = 125˚C 75˚C 25˚C 0˚C −25˚C TA = 125˚C 75˚C 25˚C −50 −20 −10 −5 −2 −1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 0˚C −25˚C 10 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 IC - Collector Current - A IC - Collector Current - A 2 Data Sheet D11204EJ3V0DS 2SB1572 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - mV BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT −10 VBE(sat) - Base Saturation Voltage - V IC = 20 . IB −1000 −500 IC = 50 . IB −5 −200 TA = 125˚C 75˚C −100 25˚C −50 −20 −10 −5 −2 −1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 0˚C −25˚C −1 −0.5 −0.2 −0.1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 IC - Collector Current - A IC - Collector Current - A GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 1000 fT - Gain Bandwidth Product - MHz OUTPUT CAPACITANCE vs. REVERSE VOLTAGE 1000 Cob - Outpur Capacitance - pF VCE = −10 V f = 1.0 MHz 500 500 200 100 50 200 100 50 20 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 IE - Emitter Current - A VCB - Collector to Base Voltage - V SWITCHING CHARACTERISTICS 10 5 ton - Turn-On Time - µs tstg - Storage Time - µs tf - Fall Time - µs VCC = −10 V IC = 20 . IB IB1 = −IB2 tstg ton 2 1 0.5 0.2 0.1 0.05 0.02 0.01 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 tf −5 −10 IC - Collector Current - A Data Sheet D11204EJ3V0DS 3 2SB1572 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4