2SC3357-T2

DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5±0.1 PACKAGE DIMENSIONS (Unit: mm) FEATURES • Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, 0.8 MIN. E 0.42 ±0.06 1.6±0.2 1.5±0.1 C B 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05 −0.03 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Thermal Resistance Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT * Rth(j-a)* Tj Tstg 20 12 3.0 100 1.2 62.5 150 −65 to +150 V V V mA W °C/W °C °C Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89) * mounted on 16 cm2 × 0.7 mm Ceramic Substrate Document No. P10357EJ4V1DS00 (4th edition) Date Published March 1997 N Printed in Japan 4.0±0.25 2.5±0.1 © 1985 2SC3357 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure Noise Figure SYMBOL ICBO IEBO hFE* fT Cre** S21e NF NF 2 MIN. TYP. MAX. 1.0 1.0 UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA µA µA 50 120 6.5 0.65 9 1.1 1.8 300 GHz 1.0 pF dB dB 3.0 dB VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz VCE = 10 V, IC = 40 mA, f = 1.0 GHz * Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % ** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge. hFE Classification Class Marking hFE RH RH 50 to 100 RF RF 80 to 160 RE RE 125 to 250 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 PT-Total Power Dissipation-W FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 MHz 2.0 Cre-Feed-back Capacitance-pF Ceramic Substrate 16 cm2 × 0.7 mm 1.0 1 Free Air 0.5 Rth(j-a) 312.5 ˚C/W 0 50 100 150 0.3 0 0.5 1 2 5 10 20 30 TA-Ambient Temperature-°C VCB-Collector to Base Voltage-V 2 2SC3357 DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 15 INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1.0 GHz |S21e|2-Insertion Gain-dB hFE-DC Current Gain 100 10 50 5 20 10 0.5 1 5 10 50 0 0.5 1 5 10 50 70 IC-Collector Current-mA GAIN BANDWIDTH PROUDCT vs. COLLECTOR CURRENT 10 IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax fT-Gain Bandwidth Product-MHz 5.0 3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0 0.5 10 5.0 10 30 IC-Collector Current-mA NOISE FIGURE vs. COLLECTOR CURRENT 7 6 VCE = 10 V f = 1.0 GHz Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB 20 |S21e|2 10 VCE = 10 V IC = 20 mA 0 0.1 0.2 0.4 0.6 0.8 1.0 f-Frequency-GHz INTERMODULATION DISTORTION vs. COLLECTOR CURRENT −80 NF-Noise Figure-dB 5 4 3 2 IM2, IM3 (dB) −70 IM3 −60 IM2 −50 0 0.5 1 5 10 50 70 IC-Collector Current-mA −40 VCE = 10 V at V0 = 100 dB µ V/50 Ω Rg = Re = 50 Ω IM2 f = 90 + 100 MHz IM3 f = 2 × 200 − 190 MHz 20 30 40 50 60 70 IC-Collector Current-mA −30 3 2SC3357 S-PARAMETER VCE = 10 V, IC = 40 mA, ZO = 50 Ω f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.196 0.103 0.056 0.024 0.008 0.039 0.072 0.102 0.129 0.151 ∠ S11 −94.4 −118.3 −131.1 −43.7 −2.0 13.1 11.8 9.6 8.6 9.8 S21 13.023 6.852 4.632 3.527 2.854 2.421 2.118 1.887 1.681 1.579 ∠ S21 102.4 89.2 78.3 75.9 68.7 65.7 59.0 57.1 52.5 51.4 S12 0.043 0.081 0.118 0.152 0.188 0.218 0.255 0.278 0.308 0.339 ∠ S12 74.5 77.4 77.5 78.0 78.4 75.7 71.7 73.1 71.3 71.8 S22 0.444 0.398 0.399 0.414 0.440 0.461 0.479 0.499 0.515 0.537 ∠ S22 −21.1 −25.3 −26.9 −28.9 −33.5 −33.3 −36.3 −35.5 −38.8 −35.9 VCE = 10 V, IC = 20 mA, ZO = 50 Ω f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.130 0.073 0.037 0.010 0.024 0.056 0.093 0.124 0.151 0.174 ∠ S11 −109.2 −134.1 −146.6 177.1 23.7 17.2 13.8 12.0 11.0 13.4 S21 13.430 6.930 4.690 3.560 2.878 2.439 2.133 1.898 1.693 1.591 ∠ S21 98.1 87.2 79.4 75.2 68.2 65.4 59.0 57.3 52.9 52.0 S12 0.042 0.081 0.119 0.154 0.191 0.220 0.257 0.280 0.311 0.341 ∠ S12 79.0 80.6 79.4 79.7 76.5 76.8 72.9 74.0 72.4 72.8 S22 0.403 0.382 0.392 0.412 0.440 0.463 0.483 0.504 0.519 0.542 ∠ S22 −22.1 −24.7 −25.6 −27.1 −31.9 −32.3 −35.7 −35.3 −38.4 −36.3 4 2SC3357 S11e, S22e-FREQUENCY CONDITION VCE = 10 V 8 0.0 2 0.4 20 1 0.9 1.0 0.8 1.2 9 0.0 1 0.4 0.10 0.40 110 0.7 0.11 0.39 100 0.12 0.38 0.13 0.37 90 0.14 0.36 80 0.15 0.35 70 1.4 0.1 6 0.3 4 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOADLECTION COEF WA F FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0G 4 GRE AN 0.4 0.4 ES LEN−160 0 4E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 −1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 00 EN ITIV 40 ON 0 ER 4 MP 0. −1 EA CO C 5 0. 07 0. 3 4 0. 0 13 1.6 6 00 1.8 0.1 0.3 7 3 0. 2.0 0.2 50 0. 18 32 0.6 19 0. 31 0. ( –Z–+–J–XTANCE CO ) MPO N T EN 0.4 0 0.2 0 0.3 40 O WAVELE NG 0 1. S11 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0.1 IC =0.620 mA 0. 8 IC = 20 mA f = 2.0 GHz 3. 0 0 0.2 1. E NC TA X – AC −J –O RE ––Z ) 0.3 ( 0. 4 E IV AT 0. 5 2.0 0.6 1.8 1.6 0.7 0.8 1.4 0.9 1.2 1.0 S21e-FREQUENCY CONDITION VCE = 10 V IC = 20 mA 90° 120° f = 0.2 GHz 60° 120° f = 2.0 GHz 150° S21e 30° 150° S12e f = 2.0 GHz 180° 3 6 9 12 15 0° 180° f = 0.2 GHz 0.1 0.2 0.3 0.4 0.5 0° −150° −30° −150° −120° −90° −60° −120° −90° 10 f = 0.2 GHz 0.4 20 f = 0.2 GHz 50 REACTANCE COMPONENT R –––– 0.2 ZO ( ) 5.0 4.0 0. 32 0. 18 0 −5 3 0.3 7 0.1 −6 4 0.3 6 0.1 0 0.35 0.15 −70 0.36 0.14 −80 1.0 0.8 0.8 0.6 0.6 0.37 0.13 0.4 0.4 0.2 0.2 −90 0.38 0.12 0.39 0.11 −100 0.40 0.10 −11 0 0.4 1 0.0 0.4 9 0.0 2 20 8 −1 NE G −1 0. 4 0. 3 07 30 0. 4 0.6 3. 0.8 0 1 0.2 9 0.2 30 0.3 4.0 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 1.0 6.0 0.2 10 0.1 f = 20 GHz 20 50 0.25 0.25 0 0.26 0.24 −10 0.27 0.23 0.2 2 −20 0.2 8 0. 29 0.2 1 0.3 −3 0.2 0 0 0 0. 3 −4 0.1 1 0 9 S12e-FREQUENCY CONDITION 90° 60° VCE = 10 V IC = 20 mA 30° −30° −60° 5 2SC3357 [MEMO] 6 2SC3357 [MEMO] 7 2SC3357 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5