2SC3569

DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for highvoltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. PACKAGE DRAWING (UNIT: mm) FEATURES • Mold package that does not require an insulating board or insulation bushing • Low collector saturation voltage: VCE(sat) = 1.0 V MAX. (@ 0.7 A) • Fast switching speed: tf ≤ 1.0 µs MAX. (@ 0.7 A) • Wide base reverse-bias SOA: VCEX(SUS) = 450 V MIN. (@ 0.5 A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 500 400 7.0 2.0 4.0 1.0 15 2.0 150 −55 to +150 Unit V V V A A A W W °C °C Electrode Connection 1. Base 2. Collector 3. Emitter * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16187EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC3569 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector to emitter voltage Collector to emitter voltage Collector to emitter voltage Collector cutoff current Collector cutoff current Collector cutoff current Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time Symbol VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1* hFE2* VCE(sat)* VBE(sat)* ton tstg tf Conditions IC = 0.5 A, IB1 = 0.1 A, L = 1 mH IC = 0.5 A, IB1 = −IB2 = 0.1 A, L = 180 µH, clamped IC = 1.0 A, IB1 = 0.2 A, −IB2 = 0.1 A, L = 180 µH, clamped VCB = 400 V, IE = 0 VCE = 400 V, RBE = 51 Ω, Ta = 125°C VCE = 400 V, VBE(OFF) = −1.5 V VCE = 400 V, VBE(OFF) = −1.5 V, Ta = 125°C VEB = 5.0 V, IC = 0 VCE = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 0.5 A IC = 0.7 A, IB = 0.14 A IC = 0.7 A, IB = 0.14 A IC = 0.7 A, RL = 214 Ω, IB1 = −IB2 = 0.14 A, VCC ≅ 150 V Refer to the test circuit. 20 10 1.0 1.2 1.0 2.5 1.0 V V MIN. 400 450 400 10 1.0 10 1.0 10 80 TYP. MAX. Unit V V V µA mA µA mA µA µs µs µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking HFE1 M 20 to 40 L 30 to 60 K 40 to 80 TYPICAL CHARACTERISTICS (Ta = 25°C) Total Power Dissipation PT (W) Case Temperature TC (°C) Collector Current IC (mA) Collector to Emitter Voltage VCE (V) 2 Data Sheet D16187EJ1V0DS 2SC3569 Transient Thermal Resistance Rth(j-c) (°C/W) IC Derating dT (%) Ta = 25°C (without heatsink) (with infinite heatsink) Case Temperature TC (°C) Pulse Width PW (s) Collector Current IC (A) Collector to Emitter Voltage VCE (V) Collector Current IC (A) Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Collector Saturation Voltage VCE(sat) (V) Base Saturation Voltage VBE(sat) (V) DC Current Gain hFE Collector Current IC (mA) Data Sheet D16187EJ1V0DS 3 2SC3569 Turn-On Time ton (µs) StorageTime tstg (µs) Fall Time tf (µs) Collector Current IC (A) Base current waveform Collector current waveform 4 Data Sheet D16187EJ1V0DS 2SC3569 [MEMO] Data Sheet D16187EJ1V0DS 5 2SC3569 • The information in this document is current as of July, 2001. 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