0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SC4226

2SC4226

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    2SC4226 - HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD - NEC

  • 详情介绍
  • 数据手册
  • 价格&库存
2SC4226 数据手册
DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 1.25 ± 0.1 FEATURES 2.0 ± 0.2 +0.1 0.3 –0 0.65 0.65 • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e| = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Small Mini Mold Package EIAJ: SC-70 2 2 3 +0.1 0.3 –0 1 0.9 ± 0.1 PART NUMBER 2SC4226-T1 QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin3 (Collector)face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. 2SC4226-T2 3 Kpcs/Reel. PIN CONNECTIONS 1. Emitter 2. Base 3. Collector * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4226) The information in this document is subject to change without notice. Document No. P10368EJ3V0DS00 (3rd edition) (Previous No. TC-2402) Date Published July 1995 P Printed in Japan 0 to 0.1 © 0.15 +0.1 –0.05 ORDERING INFORMATION 0.3 Marking 1993 2SC4226 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 12 3 100 150 150 –65 to +150 V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF 7 40 3.0 110 4.5 0.7 9 1.2 2.5 1.5 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, I C = 0 VCE = 3 V, IC = 7 mA *1 VCE = 3 V, IC = 7 mA VCE = 3 V, IE = 0, f = 1 MHz *2 VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz µA µA *1 *2 Pulse Measurement ; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank Marking hFE R23 R23 40 to 80 R24 R24 70 to 140 R25 R25 125 to 250 2 2SC4226 TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 20 PT – Total Power Dissipation – mW Free Air 200 IC – Collector Current – mA VCE = 3 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 10 100 0 50 100 150 0 0.5 VBE – Base to Emitter Voltage – V DC CURRENT GAIN vs. COLLECTOR CURRENT 1.0 TA – Ambient Temperature – °C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 IC – Collector Current – mA IB =160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 10 5 60 µ A 40 µ A 20 µ A 5 VCE – Collector to Emitter Voltage – V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 fT – Gain Bandwidth Product – GHz |S21e|2 – Insertion Power Gain – dB VCE = 3 V f = 1.0 GHz 10 15 10 10 0.5 hFE – DC Current Gain 20 100 200 VCE = 3 V 15 50 20 0 1 5 10 50 IC – Collector Current – mA INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 3 V f = 1.0 GHz 10 5 5 2 1 0.5 1 5 10 50 0 0.5 1 5 10 50 100 IC – Collector Current – mA IC – Collector Current – mA 3 2SC4226 NOISE FIGURE vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. FREQUENCY 6 |S21e|2 – Insertion Power Gain – dB VCE = 3 V f = 1 GHz 24 20 16 12 8 4 0 0.1 VCE = 3 V IC = 7 mA NF – Noise Figure – dB 4 2 0 0.5 1 5 10 50 100 0.2 0.5 1.0 2.0 5.0 IC – Collector Current – mA FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f – Frequency – GHz 5.0 Cre – Feed-back Capacitance – pF f = 1 MHz 2.0 1.0 0.5 0.2 0.1 1 2 5 10 20 50 VCB – Collector to Base Voltage – V 4 2SC4226 S-PARAMETER VCE = 3 V, IC = 7 mA, ZO = 50 Ω FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 MAG .750 .618 .528 .483 .459 .447 .441 .439 .437 .437 .440 .443 .444 .449 .450 .455 .459 .462 .466 .470 S11 ANG –45.7 –84.9 –114.5 –134.3 –148.5 –158.8 –167.4 –174.4 179.2 173.7 168.6 163.9 159.6 155.5 151.6 147.9 144.3 140.9 137.5 134.4 MAG 11.858 10.093 8.219 6.684 5.565 4.737 4.134 3.653 3.283 2.978 2.732 2.533 2.357 2.216 2.077 1.972 1.868 1.789 1.702 1.635 S21 ANG 144.0 122.3 107.7 97.9 90.5 84.6 79.7 75.2 71.1 67.2 63.7 60.0 56.6 53.4 50.3 47.4 44.3 41.3 38.4 36.1 MAG .035 .053 .064 .073 .081 .089 .098 .107 .117 .126 .136 .147 .158 .169 .180 .192 .202 .214 .226 .238 S12 ANG 63.3 53.2 50.6 50.6 50.7 52.3 53.5 54.2 54.9 55.6 55.8 55.3 55.4 55.3 54.7 54.5 53.9 53.0 52.3 51.5 MAG .816 .609 .481 .411 .365 .337 .316 .300 .290 .281 .275 .270 .267 .264 .259 .258 .256 .255 .253 .253 S22 ANG –28.5 –41.8 –46.7 –49.1 –50.5 –51.5 –52.6 –54.2 –55.9 –57.9 –59.6 –62.3 –64.7 –67.5 –70.6 –73.3 –76.3 –79.6 –83.0 –86.4 VCE = 3 V, IC = 5 mA, ZO = 50 Ω FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 MAG .819 .701 .608 .549 .511 .494 .481 .475 .472 .471 .473 .474 .474 .477 .481 .484 .489 .490 .495 .501 S11 ANG –38.9 –73.4 –102.3 –123.6 –139.6 –151.0 –160.8 –168.6 –175.7 178.2 172.8 167.6 162.9 158.4 154.4 150.3 146.5 142.9 139.3 136.0 MAG 8.934 8.007 6.898 5.819 4.970 4.255 3.750 3.328 3.004 2.734 2.522 2.355 2.176 2.038 1.921 1.818 1.726 1.647 1.578 1.505 S21 ANG 148.0 127.6 112.6 101.8 93.5 86.9 81.4 76.3 72.0 67.7 64.0 60.2 56.7 53.2 49.8 46.7 43.9 40.6 37.6 35.0 MAG .038 .060 .072 .079 .086 .093 .099 .107 .113 .122 .130 .139 .148 .158 .168 .177 .190 .200 .212 .223 S12 ANG 65.8 53.1 47.6 45.2 45.7 46.5 47.2 48.9 49.7 50.9 51.6 52.3 53.1 53.3 53.7 53.3 53.3 53.0 52.7 52.0 MAG .868 .687 .560 .483 .434 .402 .379 .361 .350 .340 .332 .328 .322 .319 .315 .313 .312 .312 .309 .309 S22 ANG –23.6 –36.7 –42.4 –45.4 –47.2 –48.6 –49.9 –51.5 –53.4 –55.4 –57.3 –59.7 –62.3 –65.2 –68.2 –70.9 –73.9 –77.2 –80.8 –84.0 5 2SC4226 S-PARAMETER VCE = 3 V, IC = 3 mA, ZO = 50 Ω FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 MAG .899 .808 .723 .660 .610 .583 .560 .547 .538 .535 .534 .533 .533 .534 .538 .542 .545 .548 .552 .556 S11 ANG –30.6 –60.6 –86.7 –108.2 –125.9 –138.6 –150.0 –159.4 –167.4 –174.4 179.3 173.4 168.3 163.2 158.7 154.3 150.0 146.1 142.0 138.3 MAG 5.578 5.327 4.877 4.341 3.883 3.388 3.046 2.741 2.498 2.287 2.111 1.965 1.830 1.721 1.620 1.544 1.464 1.396 1.336 1.280 S21 ANG 153.7 134.4 119.6 108.1 98.5 90.9 84.3 78.5 73.4 68.9 64.6 60.2 56.3 52.7 49.2 45.7 42.7 39.5 36.6 33.6 MAG .042 .069 .084 .093 .098 .102 .106 .108 .112 .116 .120 .125 .131 .139 .146 .155 .164 .174 .187 .199 S12 ANG 69.0 54.5 46.0 41.1 38.8 37.4 37.8 38.1 39.5 41.0 43.0 45.1 46.7 48.3 49.8 51.3 52.4 53.0 53.7 54.1 MAG .923 .793 .679 .604 .550 .513 .487 .468 .455 .444 .435 .429 .424 .422 .417 .414 .415 .412 .411 .411 S22 ANG –17.3 –29.2 –35.4 –39.5 –42.0 –44.2 –45.9 –47.9 –49.9 –52.3 –54.7 –57.2 –59.9 –62.8 –65.7 –68.8 –72.0 –75.3 –78.8 –82.3 VCE = 3 V, IC = 1 mA, ZO = 50 Ω FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 MAG .967 .930 .884 .842 .801 .771 .742 .722 .706 .695 .689 .685 .681 .681 .683 .684 .684 .686 .689 .690 S11 ANG –22.9 –45.8 –67.1 –85.9 –103.1 –117.0 –130.0 –141.2 –151.1 –159.9 –167.7 –174.9 178.7 172.6 166.8 161.4 156.1 151.4 146.6 142.1 MAG 1.935 1.968 1.938 1.827 1.748 1.576 1.498 1.403 1.326 1.242 1.169 1.102 1.030 .979 .925 .884 .842 .804 .773 .738 S21 ANG 159.9 143.1 129.1 117.2 106.7 97.4 89.2 81.9 75.6 69.6 64.5 59.6 55.3 50.9 47.2 43.6 40.4 37.3 34.6 32.3 MAG .045 .083 .108 .125 .134 .137 .137 .134 .129 .124 .118 .112 .106 .103 .100 .102 .107 .115 .127 .141 S12 ANG 74.0 60.1 48.9 39.4 32.6 27.1 22.9 20.0 18.5 17.8 18.1 19.8 23.5 28.0 33.6 40.4 47.5 53.5 57.9 62.1 MAG .978 .931 .870 .822 .779 .749 .722 .702 .690 .680 .671 .666 .660 .658 .654 .651 .651 .649 .646 .646 S22 ANG –9.2 –17.4 –23.2 –28.0 –31.9 –35.3 –38.4 –41.3 –44.4 –47.4 –50.4 –53.6 –56.9 –60.4 –64.0 –67.6 –71.5 –75.1 –79.2 –83.0 6 2SC4226 [MEMO] 7 2SC4226 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8
2SC4226
物料型号: - 型号:2SC4226 - 封装:SC-70

器件简介: 2SC4226是一款为VHF、UHF低噪声放大器设计的低供电电压晶体管。由于采用了小型迷你模具封装,适合高密度表面贴装组装。

引脚分配: - 引脚1:发射极(Emitter) - 引脚2:基极(Base) - 引脚3:集电极(Collector)

参数特性: - 绝对最大额定值: - 集电极-基极电压(VCBO):20V - 集电极-发射极电压(VCEO):12V - 发射极-基极电压(VEBO):3V - 集电极电流(Ic):100mA - 总功率耗散(PT):150mW - 结温(Tj):150℃ - 存储温度(Tstg):-65至+150℃

- 电气特性: - 集电极截止电流(IcBO):最大1.0μA - 发射极截止电流(IEBO):最大1.0μA - DC电流增益(hFE):最小40,典型110,最大250 - 增益带宽积(fr):最小3.0GHz,典型4.5GHz - 反馈电容(Cre):最小0.7pF,最大1.5pF - 插入功率增益(|S21|^2):最小7dB,典型9dB - 噪声系数(NF):最小1.2dB,最大2.5dB

功能详解: 2SC4226晶体管具有低噪声和高增益的特性,适用于1GHz频率下的VHF、UHF低噪声放大器。增益带宽积和噪声系数是其重要的性能参数,适用于需要低噪声放大的应用场合。

应用信息: 适用于需要低噪声放大的VHF、UHF频段应用,如无线通信、雷达系统等。

封装信息: 2SC4226采用EIAJ标准的SC-70小型迷你模具封装,适合高密度表面贴装组装。
2SC4226 价格&库存

很抱歉,暂时无法提供与“2SC4226”相匹配的价格&库存,您可以联系我们找货

免费人工找货