2SC4346

DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING DESCRIPTION The 2SC4346 is a mold power transistor developed for high-speed switching, high voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. ORDERING INFORMATION PART NUMBER 2SC4346 2SC4346-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Small package, but can control for high-current • Low collector saturation voltage VCE(sat) = 1.0 V MAX. (IC = 2.0 A) • Ultra high-speed switching tf = 0.3 µs MAX. (IC = 2.0 A) • Base reverse bias safe operating area is wide VCEX(SUS)1 = 450 V MIN. (IC = 2.0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse) Note1 500 400 8.0 5.0 10 2.5 18 1.0 Note2 V V V A A A W Note3 IB(DC) PT1 (TC = 25°C) PT2 (TA = 25°C) Tj Tstg , 2.0 W °C °C 150 −55 to +150 Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. Mounted on print board 2 3. Mounted on ceramic substrate of 7.5 mm x 0.7 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17082EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2004 2SC4346,4346-Z ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Collector to Emitter Voltage SYMBOL VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 Collector Cut-off Current ICBO ICER ICEX1 ICEX2 Emitter Cut-off Current DC Current Gain Note TEST CONDITIONS IC = 2.0 A, IB1 = 0.4 A, L = 1 mH IC = 2.0 A, IB1 = −IB2 = 0.4 A, L = 180 µH, Clamped IC = 4.0 A, IB1 = 1.0 A, −IB2 = 0.4 A, L = 180 µH, Clamped VCB = 400 V, IE = 0 VCB = 400 V, RBE = 51 Ω, TA = 125°C VCB = 400 V, VBE(OFF) = −5 V VCB = 400 V, VBE(OFF) = −5 V, TA = 125°C VEB = 5.0 V, IC = 0 VCE = 5.0 V, IC = 5 mA VCE = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 2.0 A IC = 2.0 A, IB = 0.4 A IC = 2.0 A, IB = 0.4 A IC = 2.0 A, RL = 75 Ω IB1 = −IB2 = 0.4 A, VCC See Test Circuit 150 V MIN. 400 450 400 TYP. MAX. UNIT V V V 10 1.0 100 1.0 10 15 20 10 0.5 1.0 1.0 1.5 0.7 2.5 0.3 80 µA mA µA mA IEBO hFE1 hFE2 hFE3 µA Collector Saturation Voltage Base Saturation Voltage Turn-on Time Storage Time Fall Time Note VCE(sat) VBE(sat) ton tstg tf V V Note µs µs µs Note Pulsed hFE CLASSIFICATION Marking hFE2 M 20 to 40 L 30 to 60 K 40 to 80 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT RL = 75 Ω VIN IB1 T.U.T. IB2 90 % IC VCC = 150 V Base current waveform IB1 IB2 PW PW = 50 µ s Duty Cycle ≤ 2 % −VBB = −5 V Collector current waveform IC 10 % ton tstg tf 2 Data Sheet D17082EJ2V0DS 2SC4346,4346-Z TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 12 FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W 10 With infinite heatsink (TC = 25˚C) IC - Collector Current - A (Note) 2SC4346-Z Mounted on ceramic 2 subsutrate of 7.5 mm x 0.7 mm IC(DC) 10 IC(pulse) PW = 1 µs 10 µs 8 1.0 Power Dissipation Limited 100 µs 6 Mounted on print board 4 (Note) 0.1 s/b Limited 1 ms 2 TC = 25˚C 10 ms 0 0.01 0 50 100 150 200 1 10 100 1000 TA - Ambient Temperature - °C VCE - Collector to Emitter Voltage - V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 2.0 IB = 100 90 80 70 60 50 40 30 20 10 mA mA mA mA mA mA mA mA mA mA DC CURRENT GAIN vs. COLLECTOR CURRENT 100 VCE = 5 V Pulsed IC - Collector Current - A 1.6 1.2 hFE – DC Current Gain 0.8 10 0.4 0 0 1 2 3 4 5 0.001 0.01 0.1 1 VCE - Collector to Emitter Voltage - V IC - Collector Current - A COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLCTOR CURRENT IC = 5 x IB Pulsed TURN-ON, STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT 10 VCC = 200 V IC : IB1 : IB2 = 10 : 1 : −2 Pulsed VBE(sat) - Base Saturation Voltage - V VCE(sat) - Collector Saturation Voltage - V 10 VBE(sat) tf - Fall Time - µs tstg - Storage Time - µs ton - Turn-on Time - µs tstg tf VCE(sat) 1 ton 1 0.1 0.001 0.01 0.1 1.0 10 0.1 1 10 IC - Collector Current - A IC - Collector Current - A Data Sheet D17082EJ2V0DS 3 2SC4346,4346-Z PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3Z) 1.5 −0.1 +0.2 5.0 ±0.2 1.6 ±0.2 0.5 ±0.1 6.5±0.2 5.0±0.2 0.8 4.3 MAX. 1.5-0.1 +0.2 6.5 ±0.2 2.3 ±0.2 2.3±0.2 0.5±0.1 5.5 ±0.2 1 2 3 13.7 MIN. 1 2 3 7.0 MIN. 2.0 MIN. 5.5±0.2 10.0 MAX. 4 1.1 ±0.2 1.1±0.2 0.5 −0.1 2.3 2.3 0.75 +0.2 0.5 −0.1 1. Base 2. Collector 3. Emitter 4. Fin (Collector) +0.2 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Base 2. Collector 3. Emitter 4. Fin (Collector) 4 Data Sheet D17082EJ2V0DS 0.7 1.0 MIN. 1.8 TYP. 4 2SC4346,4346-Z • T he information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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