2SD1481

DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC to the devices such as OA and FA equipment and motor solenoid relay printer head drivers PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Base current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 60 ±10 60 ±10 7.0 2.0 4.0 0.2 15 1.5 150 −55 to +150 Unit V V V A A A W W °C °C * PW ≤ 300 µs, duty cycle ≤ 10% (OHFWURGH &RQQHFWLRQ  %DVH  &ROOHFWRU  (PLWWHU  )LQ FROOHFWRU The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16189EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD1481 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time Symbol ICBO hFE1 hFE2 VCE(sat) VBE(sat) ton tstg tf Conditions VCB = 40 V, IE = 0 VCE = 2.0 V, IC = 1.0 A* VCE = 2.0 V, IC = 3.0 A* IC = 1.0 A, IB = 1.0 mA* IC = 1.0 A, IB = 1.0 mA* IC = 1.0 A, IB1 = −IB2 = 10 mA RL = 50 Ω, VCC ≅ 50 V Refer to the test circuit. 0.5 2.0 1.0 2,000 500 1.5 2.0 V V MIN. TYP. MAX. 1.0 20,000 Unit µA µs µs µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking hFE1 M 2,000 to 5,000 L 4,000 to 10,000 K 8,000 to 20,000 TYPICAL CHARACTERISTICS (Ta = 25°C) CASE Total Power Dissipation PT (W) With infinite heatsink Collector Current IC (A) Notes 1. Tc = 25°C 2. 3. Case Temperature Tc (°C) Collector to Emitter Voltage VCE (V) Collector Current IC (A) IC Derating dT (%) Case Temperature TC (°C) Collector to Emitter Voltage VCE (V) 2 Data Sheet D16189EJ1V0DS 2SD1481 Pulse test Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Pulse test DC Current Gain hFE Collector Current IC (A) Collector Current IC (A) SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT %DVH FXUUHQW ZDYHIRUP &ROOHFWRU FXUUHQW ZDYHIRUP Data Sheet D16189EJ1V0DS 3 2SD1481 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4