DATA SHEET
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals.
ORDERING INFORMATION
Ordering Name 2SD560 Package TO-220AB
FEATURES
• C-to-E reverse diode inserted • Low collector saturation voltage
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 10 ms, duty cycle ≤ 50% Conditions Ratings 150 100 7.0 ±5.0 ±8.0 0.5 30 1.5 150 −55 to +150 Unit V V V A A A W W °C °C
INTERNAL EQUIVALENT CIRCUIT
1. Base 2. Collector 3. Emitter
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14863EJ3V0DS00 (3rd edition) Date Published April 2002 N CP(K) Printed in Japan
©
2002 1998
2SD560
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Collector cutoff current DC current gain Symbol ICBO hFE1 hFE2 Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time VCE(sat) VBE(sat) ton tstg tf Conditions VCB = 100 V, IE = 0 A VCE = 2.0 V, IC = 3.0 A VCE = 2.0 V, IC = 5.0 A IC = 3.0 A, IB = 3.0 mA
Note
MIN.
TYP.
MAX. 1.0
Unit
µA
2,000 500
6,000
15,000
Note
Note
0.9 1.6 1.0 3.5 1.2
1.5 2.0
V V
IC = 3.0 A, IB = 3.0 mANote IC = 3.0 A, RL = 16.7 Ω, IB1 = −IB2 = 3.0 mA, VCC ≅ 50 V Refer to the test circuit.
µs µs µs
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking hFE1 MB 2,000 to 5,000 LB 3,000 to 7,000 KB 5,000 to 15,000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current waveform
Collector current waveform
2
Data Sheet D14863EJ3V0DS
2SD560
TYPICAL CHARACTERISTICS (TA = 25°C)
Total Power Dissipation PT (W)
With infinite heatsink (Tc = 25°C)
Without heatsink
Collector Current IC (A)
Heatsink’: 2.0 mm Aluminum, bpard No insulating boad Silicon brease coating Horizontal level
Single pulse
Temperature T (°C)
Collector to Emitter Voltage VCE (V)
Pulse test
Collector Current IC (A)
DC Current Gain hFE
Collector Current IC (A) Collector to Emitter Voltage VCE (V)
Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V)
Pulse test
Collector Current IC (A)
Data Sheet D14863EJ3V0DS
3
2SD560
PACKAGE DRAWING (UNIT: mm)
1. Base 2. Collector 3. Emitter 4. Fin (collector)
4
Data Sheet D14863EJ3V0DS
2SD560
[MEMO]
Data Sheet D14863EJ3V0DS
5
2SD560
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