2SJ358

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings (unit: mm) The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be directly driven by an IC operating at 5 V. The 2SJ358 features a low on-resistance and excellent switching characteristics, and is suitable for applications such as actuator driver and DC/DC converter. 1 5.7 ±0.1 2.0 ±0.2 1.5 ±0.1 2 3 FEATURES • New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages • Can be directly driven by an IC operating at 5 V. • Low on-resistance RDS(ON) = 0.40 Ω MAX. @VGS = –4 V, ID = –1.5 A RDS(ON) = 0.30 Ω MAX. @VGS = –10 V, ID = –1.5 A 1.0 0.5 ±0.1 2.1 0.85 ±0.1 4.2 0.5 ±0.1 0.4 ±0.05 Equivalent Circuit Drain (D) Electrode Connection 1. Source Internal 2. Drain Diode 3. Gate Marking: UA2 Gate (G) Gate Protect Diode Source (S) QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = +25 ˚C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms Duty Cycle ≤ 1 % Mounted on ceramic board of 7.5 cm2 × 0.7 mm VGS = 0 VDS = 0 Conditions Ratings –60 –20/+10 –/+3.0 –/+6.0 Unit V V A A Total Power Loss Channel Temperature Storage Temperature PT Tch Tstg 3.65 ±0.1 0.55 2.0 150 –55 to +150 5.4 ±0.25 W ˚C ˚C The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. TC-2491 (O.D. No. TC-8011) Date Published October 1994 P Printed in Japan © 1994 2SJ358 ELECTRICAL SPECIFICATIONS (Ta = +25 ˚C) Parameter Drain Shut-down Current Gate Leak Current Gate Cutoff Voltage Forward Transfer Admittance Drain-Source On-Resistance Drain-Source On-Resistance Input Capacitance Output Capacitance Feedback Capacitance On-Time Delay Rise Time Off-Time Delay Fall Time Gate Input Charge Gate-Source Chanrge Gate-Drain Charge Internal Diode Reverse Recovery Time Internal Diode Reverse Recovery Charge Symbol IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD trr VDS = –48 V, VGS = –10 V, ID = –3.1 A, IG = –2 mA IF = 3.0 A di/dt = 50 A/µs VDD = –25 V, ID = –1.5 A VGS(on) = –10 V RG = 1 0 Ω , R L = 1 7 Ω Conditions VDS = –60 V, VGS = 0 VGS = –16/+10 V, VDS = 0 VDS = –10 V, ID = –1 mA VDS = –10 V, ID = –1.0 A VGS = –4 V, ID = –1.5 A VGS = –10 V, ID = –1.5 A VDS = –10 V, VGS = 0, f = 1.0 MHz –1.0 1.8 0.29 0.18 600 300 120 6 35 155 95 23.9 1.5 8.1 95 0.40 0.30 –1.4 MIN. TYP. MAX. –10 –/+10 –2.0 Unit µA µA V S Ω Ω pF pF pF ns ns ns ns nC nC nC ns Qrr 118 nC CHARACTERISTICS CURVES (Ta = +25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT – Derating Factor – % –10 1 FORWARD BIAS SAFE OPERATING AREA m –5 ID – Drain Current – A 80 –2 –1 –0.5 –0.2 –0.1 0 25 50 75 100 125 150 –0.05 Single Pulse –0.5 –1 –2 –5 –10 DS PW 10 = s m s 60 10 0 m s 40 20 –20 –50 –100 Ta – Ambient Temperature – ˚C VDS – Drain to Source Voltage – V 2 2SJ358 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –10 Pulsed ID – Drain Current – A –8 ID – Drain Current –A TRANSFER CHARACTERISTICS –10 VDS = –10 V Pulsed –1 Ta = 150 ˚C –0.1 –0.01 –0.001 Ta = –25 ˚C Ta = 0 ˚C Ta = 25 ˚C Ta = 75 ˚C –1 0V –6 –4 .5 V –4.0 V –3.5 V –4 –3.0 V –2 –2.5 V VGS = –2.0 V –0.0001 –0.00001 0 –1 –2 –3 –4 –5 –1 –2 –3 –4 VDS – Drain to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| – Forward Transfer Admittence – S 10 VDS = –10 V Pulsed Ta = –25 ˚C VGS – Gate to Source Voltage – V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRINT 0.7 VGS = –4 V Pulsed 0.6 Ta = 150 ˚C Ta = 75 ˚C 0.5 0.4 0.3 0.2 Ta = 25 ˚C 0.1 0 –0.01 –0.01 Ta = 0 ˚C Ta = –25 ˚C –0.1 –1 –10 1 0.1 Ta = 0 ˚C Ta = 25 ˚C Ta = 75 ˚C Ta = 150 ˚C 0.01 0.001 –0.0001 –0.001 –0.01 –0.1 –1 ID – Drain Current – A RDS(on) – Drain to Source On-State Resistance – Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.5 VGS = –10 V Pulsed Ta = 150 ˚C Ta = 75 ˚C 0.4 0.3 RDS(on) – Drain to Source On-State Resistance – Ω ID – Drain Current – A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.6 Pulsed RDS(on) – Drain to Source On-State Resistance – Ω 0.4 ID = 3.0 A 0.2 0.2 ID = 1.5 A 0.1 Ta = 25 ˚C 0 –0.001 –0.01 Ta = 0 ˚C –0.1 Ta = –25 ˚C –1 –10 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20 ID – Drain Current – A VGS – Gate to Source Voltage – V 3 2SJ358 SOURCE TO DRAIN DIODE FORWARD VOLTAGE –10 ISD – Diode Forward Current – A –1 –0.1 VGS = 0 Pulsed 10000 Ciss, Coss, Crss – Capacitance – pF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 f = 1 MHz Ciss 1000 –0.01 100 Crss Coss –0.001 –0.0001 –0.2 10 –0.4 –0.6 –0.8 –1.0 –1.2 –1 –10 VDS – Drain to Source Voltage – V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr – Reverse Recovery Time – ns VGS = 0 di/dt = 50 A/ µs –100 VSD – Source to Drain Voltage – V SWITCHING CHARACTERISTICS td(on), tr, td(off), tr – Switching Time – ns 1000 VDD = –25 V VGS(ON) = –10 V td(off) 100 tf tr td(on) 100 10 0.1 1 ID – Drain Current – A 10 10 –0.05 –0.1 –0.5 –1 –5 –10 ID – Diode Forward Current – A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(j–a) – Transient Thermal Resistance – ˚C/W 1000 100 Single Pulse Using ceramic board of 7.5 cm2 × 0.7 mm 10 1 0.1 1m 10 m 100 m 1 10 100 PW – Pulse Width – s 4 2SJ358 RELATED DOCUMENTS Document Name Semiconductor Device Mounting Technology Manual NEC Semiconductor Device Reliability/Quality Control System Guide to Quality Assurance for Semiconductor Device Document No. IEI-1207 TEI-1202 MEI-1202 5 2SJ358 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6