2SJ687-ZK-E1-AY

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A) • 2.5 V drive available • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) 0.27 g TYP. Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-252) −20 m12 m20 m60 36 1.0 150 −55 to +150 −20 40 V V A A W W °C °C A mJ VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −10 V, RG = 25 Ω, VGS = −12 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18719EJ2V0DS00 (2nd edition) Date Published May 2007 NS Printed in Japan 2007 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 2SJ687 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current SYMBOL IDSS IGSS VGS(off) | yfs | Note TEST CONDITIONS VDS = −20 V, VGS = 0 V VGS = m12 V, VDS = 0 V VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −10 A VGS = −4.5 V, ID = −10 A VGS = −3.0 V, ID = −10 A VGS = −2.5 V, ID = −10 A VDS = −10 V, VGS = 0 V, f = 1 MHz VDD = −10 V, ID = −10 A, VGS = −4.5 V, RG = 3 Ω MIN. TYP. MAX. −10 m100 UNIT μA nA V S Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note −0.6 20 −1.2 −1.45 Drain to Source On-state Resistance RDS(on)1 RDS(on)2 RDS(on)3 5.4 7.1 10.8 4400 1070 760 36 220 270 310 7.0 9.0 20 mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = −16 V, VGS = −4.5 V, ID = −20 A IF = −20 A, VGS = 0 V IF = −20 A, VGS = 0 V, di/dt = −100 A/μs 57 12 28 0.85 200 240 1.5 V ns nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = −12 → 0 V − ID VDD 50 Ω L VDD PG. BVDSS VDS VGS(−) 0 τ Starting Tch τ = 1 μs Duty Cycle ≤ 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL RG VDD VDS(−) 90% 10% 10% 90% VGS(−) VGS Wave Form 0 10% VGS 90% IAS VDS 0 td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = −2 mA PG. 50 Ω RL VDD 2 Data Sheet D18719EJ2V0DS 2SJ687 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 PT - Total Power Dissipation - W 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Tch - Channel Temperature - °C FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - °C 100 80 60 40 20 0 -1000 ID - Drain Current - A -100 ID(pulse) ID(DC) -10 RDS(on) Limited (VGS = −4.5 V) Po w er D PW = 1 ms is si p at io 10 ms n Li m it e d -1 T C = 25 ° C Single Pulse -0.1 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W Rth(ch-A) = 125°C/Wi 100 10 Rth(ch-C) = 3.47°C/Wi 1 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18719EJ2V0DS 3 2SJ687 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -100 -10 VDS = −10 V Pulsed -60 ID - Drain Current - A -40 ID - Drain Current - A VGS = −4.5 V −2.5 V -1 -0.1 -0.01 -0.001 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 0 -1 -2 -3 -20 Pulsed 0 0 -1 -2 -3 VDS - Drain to Source Voltage - V -0.0001 VGS - Gate to Source Voltage - V VGS(off) – Gate to Source Cut-off Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -2 100 Tch = −55°C −25°C 10 -1.5 -1 1 25°C 75°C 125°C 150°C -0.01 -0.1 -1 -0.5 VDS = −10 V ID = −1 mA 0 -75 -25 25 75 125 175 Tch - Channel Temperature - °C 0.1 VDS = −10 V Pulsed -10 -100 0.01 -0.001 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 50 40 30 20 10 0 0 -5 -10 -15 VGS - Gate to Source Voltage - V 60 Pulsed 50 40 30 20 VGS = −2.5 V 10 0 -0.1 −4.5 V ID = −10 A Pulsed -1 -10 -100 ID - Drain Current - A 4 Data Sheet D18719EJ2V0DS 2SJ687 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 15 Ciss, Coss, Crss - Capacitance - pF 10000 VGS = −2.5 V Ciss Coss 1000 10 −4.5 V 5 ID = −10 A Pulsed 0 -75 -25 25 75 125 175 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS 1000 td(off) tf 100 tr Crss VGS = 0 V f = 1 MHz 100 -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS -25 -5 -4 -3 -2 -1 ID = −20 A 0 0 0 10 20 30 40 50 60 VDS - Drain to Source Voltage - V -20 -15 -10 -5 VGS 10 -0.1 VDD = −10 V VGS = −4.5 V RG = 3 Ω -1 td(on) VDS -10 -100 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE -100 10000 −4.5 V −2.5 V -1 VGS = 0 V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT -10 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1000 100 di/dt = −100 A/μs VGS = 0 V 10 -0.1 -1 -10 -100 -0.1 Pulsed -0.01 0 -0.5 -1 -1.5 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D18719EJ2V0DS 5 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns VDD = −16 V −10 V −4 V 2SJ687 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR -100 IAS - Single Avalanche Current - A Energy Derating Factor - % 120 100 80 60 40 20 0 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C IAS = −20 A -10 Starting Tch = 25°C VDD = −10 V RG = 25 Ω VGS = −12 → 0 V 0.1 VDD = −10 V RG = 25 Ω VGS = −12 → 0 V IAS ≤ −20 A EAS = 40 mJ -1 0.01 L - Inductive Load - mH 6 Data Sheet D18719EJ2V0DS 2SJ687 PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 4 2.3±0.1 0.5±0.1 No Plating 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 1 0.8 2 3 No Plating 0 to 0.25 0.5±0.1 1.0 1.14 MAX. 2.3 2.3 0.76±0.12 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 0.51 MIN. Data Sheet D18719EJ2V0DS 7 2SJ687 • T he information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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