2SK2111

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching motors and DC/DC converters. characteristics and is ideal for driving the actuators, such as PACKAGE DIMENSIONS (in mm) 4.5 ± 0.1 1.6 ± 0.2 2.5 ± 0.1 4.0 ± 0.25 1.5 ± 0.1 0.8 MIN. S 0.42 ±0.06 D G FEATURES • Low ON resistance RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A • High switching speed ton + toff < 100 ns • Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03 –0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Marking: NU Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 50 % 16 cm2 × 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 60 ± 20 ± 1.0 ± 2.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.0 150 –55 to +150 W ˚C ˚C Document No. D11231EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan 1996 2SK2111 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Current Gate Leakage Current Gate Cut-Off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VDD = 25 V, ID = 0.5 A VGS(on) = 10 V, RG = 10 Ω RL = 50 Ω TEST CONDITIONS VDS = 60 V, VGS = 0 VGS = ± 20 V, VDS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.5 A VGS = 4.0 V, ID =0.5 A VGS = 10 V, ID = 0.5 A VDS = 10 V, VGS = 0, f = 1.0 MHz 0.8 0.4 0.32 0.24 170 87 32 2.8 2.3 55 27 0.6 0.45 1.4 MIN. TYP. MAX. 1.0 ± 10 2.0 UNIT µA µA V S Ω Ω pF pF pF ns ns ns ns 2 2SK2111 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 10 5 ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 80 dT - Derating Factor - % 60 2 1 0.5 DC PW 1 10 =1 m 0 s m s 40 00 ms 20 0.2 Single pulse 0 30 60 90 120 150 0.1 1 2 5 10 20 50 100 TA - Ambient Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1.0 10 V 0.8 ID - Drain Current - A VDS - Drain to Source Voltage - V TRANSFER CHARACTERISTICS 1 VDS = 10 V 2.5 V 4.5 V 4.0 V 3.5 V 3.0 V VGS = 2.0 V ID - Drain Current - A 0.1 TA = 75 ˚C 25 ˚C –25 ˚C 0.6 0.01 0.4 0.2 0.001 0 0.4 0.8 1.2 1.6 2.0 0.0001 0.5 1 1.5 2 2.5 3 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 |yfs| - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 VGS = 4 V VDS = 10 V 1 TA = –25 ˚C 25 ˚C 75 ˚C 0.1 RDS(on) - Drain to Source On-State Resistance - Ω 0.5 TA = 75 ˚C 25 ˚C –25 ˚C 0.01 0.001 0.01 0.1 1 0 0.01 0.1 1 10 ID - Drain Current - A ID - Drain Current - A 3 2SK2111 RDS(on) - Drain to Source On-State Resistance - Ω 1 VGS = 10 V RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 ID = 0.5 A 0.5 TA = 75 ˚C 25 ˚C –25 ˚C 0 0.01 0.1 1 10 0.5 0 5 10 15 20 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td(on), tr, td(off), tf - Switching Time - ns 500 Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz Ciss Coss 100 VGS - Gate to Source Voltage - V SWITCHING CHARACTERISTICS td(off) 50 tf 20 10 5 td(on) 2 1 0.05 0.1 0.2 0.5 VDD = 25 V VGS(on) = 10 V 1 5 2 tr 200 100 50 Crss 20 10 0.1 0.2 0.5 1 2 5 10 20 50 100 VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1 ISD - Diode Forward Current - A ID - Drain Current - A 0.1 0.01 0.001 0.0001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD - Source to Drain Voltage - V 4 2SK2111 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 2SK2111 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11