2SK3060-ZJ

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3060 2SK3060-S 2SK3060-ZJ 2SK3060-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Low on-state resistance RDS(on)1 = 13 m Ω MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 m Ω MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in gate protection diode Note This package is produced only in Japan. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 (TO-220AB) 60 ±20 +20, −10 ±70 ±210 70 1.5 150 –55 to +150 35 122.5 V V V A A W W °C °C A mJ (TO-262) VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 5 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13099EJ3V0DS00 (3rd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1997,2000 2SK3060 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 35 A VGS = 4.0 V, ID = 35 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 35 A VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 35 A VGS = 10 V VDD = 30 V RG = 10 Ω ID = 70 A VDD = 48 V VGS = 10 V IF = 70 A, VGS = 0 V IF = 70 A, VGS = 0 V di/dt = 100 A / µs 2400 700 280 30 600 140 450 50 7.5 18 1.0 55 75 1.0 15 MIN. TYP. 11 16 1.5 50 10 ±10 MAX. 13 20 2.0 UNIT mΩ mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V BVDSS VDS 50 Ω L VDD 5 TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD ID 90% 90% VGS VGS Wave Form 90% 0 10% IAS ID VDD VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% ID ID Wave Form 0 10% 10% td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA 50 Ω RL VDD PG. 2 Data Sheet D13099EJ3V0DS 2SK3060 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 25 50 75 100 125 150 175 200 100 80 60 40 20 120 100 80 60 40 20 0 25 50 75 100 125 150 175 200 0 TC - Case Temperature - °C TC - Case Temperature - °C 5 1000 FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 100 R ( DS o n) Lim i (@ ted V GS =1 0V ) ID(pulse)=210 A P W 10 10 0m on =1 1m ms 0µ 0µ DC Dis 10 sip s s s s 10 ati ID(DC)=70 A Lim ite d 1.0 TC = 25˚C 0.1 Single Pulse 1.0 0.1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 10000 rth(t) - Transient Thermal Resistance - ˚C/W 1000 100 Rth(ch-A)= 83.3 ˚C/W 10 Rth(ch-C)= 1.79 ˚C/W 1 0.1 0.01 10 µ Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13099EJ3V0DS 3 2SK3060 FORWARD TRANSFER CHARACTERISTICS 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 250 ID - Drain Current - A 10 ID - Drain Current - A TA = 125˚C 75˚C 25˚C −25˚C 200 150 100 50 VGS = 10 V 1 VGS = 4.0 V 0.1 Pulsed VDS = 10 V 4 5 0 1 2 3 0 0.5 1.0 1.5 2.0 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S 100 Tch = −25˚C 25˚C 75˚C 125˚C RDS(on) - Drain to Source On-state Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 10 20 1 10 ID = 35 A 0.1 0.1 VDS = 10 V Pulsed 1.0 10 100 0 10 VGS - Gate to Source Voltage - V 20 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 75 Pulsed GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V 2.0 VDS = 10 V ID = 1 mA 1.5 50 1.0 25 VGS = 4.0 V VGS = 10 V 0 0.1 1 10 100 1000 0.5 0 −50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - ˚C 4 Data Sheet D13099EJ3V0DS 2SK3060 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 ISD - Diode Forward Current - A Pulsed 40 100 30 VGS = 4.0 V VGS = 10 V VGS = 0 V 20 10 10 V 10 ID = 35 A −50 0 50 100 150 1 0 0.1 0 0.5 1.0 1.5 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF Ciss Coss 1000 Crss VGS = 0 V f = 1 MHz 10000 VDD = 30 V VGS = 10 V RG = 10 Ω tr 1000 tf td(off) td(on) 100 100 10 0.1 1 10 100 10 0.1 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 50 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 18 40 VDD = 48 V 30 V 12 V VGS 16 14 30 20 VDS 10 12 10 8 6 4 2 0 20 40 60 80 0 100 10 1 0.1 1 10 100 IF - Drain Current - A QG - Gate Charge - nC VGS - Gate to Source Voltage - V di/dt = 100 A /µ s VGS = 0 V ID = 70 A Data Sheet D13099EJ3V0DS 5 2SK3060 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 160 IAS = 35 A 140 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 35 A IAS - Single Avalanche Current - A EAS 10 Energy Derating Factor - % 10 m =1 22. 120 100 80 60 40 20 5m J 1.0 RG = 25 Ω VDD = 30 V VGS = 20 V → 0 V Starting Tch = 25 °C 0.1 10 µ 100 µ 1m 0 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C 6 Data Sheet D13099EJ3V0DS 2SK3060 PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) 3.0±0.3 10.6 MAX. 10.0 5.9 MIN. 15.5 MAX. 4.8 MAX. 2)TO-262 (MP-25 Fin Cut) 1.0±0.5 φ 3.6±0.2 4.8 MAX. 1.3±0.2 1.3±0.2 (10) 4 1 2 3 4 123 6.0 MAX. 1.3±0.2 1.3±0.2 12.7 MIN. 12.7 MIN. 8.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 0.75±0.1 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 3)TO-263 (MP-25ZJ) (10) 4 4.8 MAX. 1.3±0.2 5 4)TO-220SMD (MP-25Z) (10) 4 1.0±0.5 Note 4.8 MAX. 1.3±0.2 1.0±0.5 5.7±0.4 1.4±0.2 0.7±0.2 2.54 TYP. 1 2 (0 .5R ) 1.1±0.4 3.0±0.5 8.5±0.2 8.5±0.2 3 2.54 TYP. ( R 0.8 ) 1.4±0.2 0.5±0.2 1.0±0.3 2.54 TYP. 1 2 (0 ) .5R 8R) . (0 0.5±0.2 3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Body Diode Gate Protection Diode Source Data Sheet D13099EJ3V0DS 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 7 2SK3060 • The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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