2SK3296-ZK

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3296 2SK3296-S 2SK3296-ZK 2SK3296-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZK) TO-263(MP-25ZJ) FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A) • Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) • Built-in gate protection diode • Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±35 ±140 1.5 40 150 −55 to +150 V V A A W W °C °C Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14063EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark shows major revised points. © 1999, 2000 2SK3296 ELECTRICAL CHARACTERISTICS(TA = 25°C) CHARACTERISTICS Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 10 V ID = 35 A IF = 35 A, VGS = 0 V IF = 35 A, VGS = 0 V di/dt = 100 A/µs TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 18 A VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 18 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V , ID = 18 A VGS(on) = 10 V RG = 10 Ω 1.0 9.0 8.5 12 1300 570 300 70 1220 100 180 30 4.5 8.0 1.0 35 23 12 19 MIN. TYP. MAX. 10 ±10 2.5 UNIT µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG VDD ID VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% ID Wave Form VGS VGS Wave Form IG = 2 mA VGS(on) 90% RL VDD 0 10% PG. 90% 90% 50 Ω ID 0 10% 10% td(on) ton tr td(off) toff tf 2 Data Sheet D14063EJ2V0DS 2SK3296 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 160 140 ID - Drain Current - A 1000 100 FORWARD TRANSFER CHARACTERISTICS 120 7.0 V 100 80 60 40 20 Pulsed 0 0 1 2 3 4.5 V ID - Drain Current - A VGS =10 V 10 Tch = −50˚C −25˚C 25˚C 75˚C 125˚C 1 150˚C 0.1 0.01 0.001 0 1 2 3 VDS = 10 V Pulsed 4 5 6 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 2.5 2.0 1.5 1.0 0.5 0 −50 VDS = 10 V ID = 1 mA | yfs | - Forward Transfer Admittance - S 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Tch = −50˚C −25˚C 25˚C 75˚C 10 150˚C 1 0 50 100 150 0.1 0.1 1 10 VDS = 10 V Pulsed 100 Tch - Channel Temperature - ˚C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 50 Pulsed 40 ID = 28 A 18 A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 Pulsed 40 30 7A 20 30 20 VGS = 4.5 V 7.0 V 10 V 10 0 10 0 5 10 15 20 0 1 10 100 1000 VGS - Gate to Source Voltage - V ID - Drain Current - A Data Sheet D14063EJ2V0DS 3 2SK3296 RDS(on) - Drain to Source On-state Resistance - mΩ ISD - Diode Forward Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 ID = 18 A Pulsed 20 VGS = 4.5 V 15 7.0 V 10 10 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed VGS = 10 V 4.5 V 10 0V 1 100 5 0 −50 0.1 0 50 100 150 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 10000 VGS = 0 V f = 1 MHz 1000 tr tf 1000 Ciss 100 td(off) Coss Crss 100 0.1 1 10 100 td(on) 10 5 0.1 1 10 VDD = 10 V VGS = 10 V RG = 10 Ω 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 100 A/µs VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 20 16 VGS - Gate to Source Voltage - V ID = 35 A 12 VDD = 16 V 10 V 4V 8 VGS 15 100 10 10 5 VDS 0 0 10 20 30 40 4 1 0.1 0 1 10 100 ISD - Diode Forward Current - A QG - Gate Charge - nC 4 Data Sheet D14063EJ2V0DS 2SK3296 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 dT - Percentage of Rated Power - % 100 80 60 40 PT - Total Power Dissipation - W 0 20 40 60 80 120 140 160 40 30 20 20 0 100 10 0 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 1000 ID - Drain Current - A 100 d ite V) Lim 10 n) = o S( S RD VG ID(DC) (@ ID(pulse) 10 0 0 s PW = 10 µs 30 s µ µ Po we rD 10 iss ipa 3 10 ms m s 1m s tio n Lim ite d DC 1 0.1 TC = 25°C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W 100 Rth(ch-A) = 83.3˚C/W 10 Rth(ch-C) = 3.13˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D14063EJ2V0DS 5 2SK3296 PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) 3.0±0.3 2)TO-262 1.0±0.5 10.6 MAX. 10.0 4.8 MAX. 4.8 MAX. 1.3±0.2 φ 3.6±0.2 5.9 MIN. (10) 1.3±0.2 4 15.5 MAX. 1 2 3 4 123 6.0 MAX. 1.3±0.2 12.7 MIN. 1.3±0.2 12.7 MIN. 8.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 2.8±0.2 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3)TO-263 (MP-25ZK) 10.0±0.2 No plating 0.4 8.4 TYP. 4 1.35±0.3 4)TO-263 (MP-25ZJ) 4.45±0.2 1.3±0.2 (10) 4 1.0±0.5 8.5±0.2 4.8 MAX. 1.3±0.2 8.0 TYP. 9.15±0.2 15.25±0.5 0.025 to 0.25 5.7±0.4 2.45±0.25 1.4±0.2 0.7±0.2 2.54 TYP. 1 2 (0 .5R ) 0.5± 0.7±0.15 2.54 1 2 3 0.2 8o 0 to 3 2.54 TYP. (0 .8R ) 0.5±0.2 0.25 1.Gate 2.Drain 3.Source 2.5 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Body Diode Gate Protection Diode Source 6 Data Sheet D14063EJ2V0DS 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2SK3296 [MEMO] Data Sheet D14063EJ2V0DS 7 2SK3296 • The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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