2SK3322-ZK

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ★ ORDERING INFORMATION PART NUMBER 2SK3322 2SK3322-S 2SK3322-ZJ 2SK3322-ZK PACKAGE TO-220AB (MP-25) TO-262 TO-263(MP-25ZJ) TO-263(MP-25ZK) FEATURES ★ • Low gate charge : QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8 A) • Avalanche capability ratings • Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±5.5 ±20 1.5 65 150 −55 to +150 4.0 10.7 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information contained in this document is being issued in advance of the production cycle for the product. The parameters for the product may change before final production or NEC Electronics Corporation, at its own discretion, may withdraw the product prior to its production. Not all products and/or types are availabe in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14114EJ2V0DS00 (2nd edition) Date Published August 2003 NS CP(K) Printed in Japan The mark ★ shows major revised points. 1999, 2000 2SK3322 ★ ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.8 A VGS = 10 V, ID = 2.8 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 150 V, ID = 2.8 A, VGS = 10 V, RG = 10 Ω MIN. TYP. MAX. 100 ±10 UNIT µA µA V S 2.5 1.0 1.7 550 115 13 12 10 35 12 3.5 Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note 2.2 Ω pF pF pF Ns ns ns ns nC nC nC V VDD = 450 V, VGS = 10 V, ID = 5.5 A IF = 5.5 A, VGS = 0 V IF = 5.5 A, VGS = 0 V, di/dt = 50 A/µs 15 4 4.4 1.0 1.6 5.3 VF(S-D) trr Qrr µs µC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V BVDSS VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% ID Wave Form TEST CIRCUIT 2 SWITCHING TIME L VDD PG. D.U.T. RL VGS VGS Wave Form 50 Ω RG 0 10% VGS 90% VDD ID 90% 90% IAS ID VDD ID 0 10% 10% td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA 50 Ω RL VDD PG. 2 Data Sheet D14114EJ2V0DS 2SK3322 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 10 ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 100 VDS = 10 V Pulsed VGS = 10 V 8.0 V 6.0 V ID - Drain Current - A 10 1 Tch = 125˚C 75˚C 25˚C −25˚C 5 0.1 0 0 10 20 30 40 50 VDS - Drain to Source Voltage - V 0.01 0 5 10 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 VDS = 10 V ID = 1 mA | yfs | - Forward Transfer Admittance - S 5 10 Tch = −25˚C 25˚C 75˚C 125˚C 3 1 2 1 0 −50 0 50 100 150 0.1 0.1 VDS = 10 V Pulsed 1 ID - Drain Current - A 10 Tch - Channel Temperature - ˚C RDS (on) - Drain to Source On-State Resistance - Ω 3 Pulsed ID = 4.0 A 2 2.8 A RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3 VGS = 10 V 20 V 2 1 1 0 0 5 10 15 0 0.1 Pulsed 1 10 ID - Drain Current - A 100 VGS - Gate to Source Voltage - V Data Sheet D14114EJ2V0DS 3 2SK3322 RDS (on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ID = 4.0 A 3 2.8 A ISD - Diode Forward Current - A 4 10 0 VGS = 10 V 0.1 0V 2 1 VGS = 10 V Pulsed 0 −50 0 50 100 150 0.01 0 0.5 1 Pulsed 1.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 100 td(off) td(on) 10 tr tf VGS = 0 V f = 1 MHZ 1000 Ciss 100 Coss 1 10 Crss 1 0.1 1 10 100 0.1 0.1 VDD = 150 V VGS = 10 V RG = 10 Ω 1 ID - Drain Current - A 10 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000 trr - Reverse Recovery Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 VDS - Drain to Source Voltage - V 14 600 VDD = 450 V 300 V 150 V 12 10 VGS 8 6 200 VDS 0 0 4 8 12 4 2 0 16 1000 400 100 10 0.01 0.1 1 10 ID - Drain Current - A QG - Gate Charge - nC 4 Data Sheet D14114EJ2V0DS VGS - Gate to Source Voltage - V di/dt = 50 A/µS VGS = 0 V ID = 4.0 A 2SK3322 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 20 40 60 80 100 120 140 160 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 80 60 40 20 0 0 Tch - Channel Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 TC = 25˚C Single Pulse ID(pulse) P W ID - Drain Current - A = 10 L n) (o d ite im ID(DC) 10 0 µs 10 µs 1m Po we r 10 m s R DS 1 s Di ss ipa tio n Lim ite d 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W 100 Rth(ch-A) = 83.3˚C/W 10 Rth(ch-C) = 1.93˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D14114EJ2V0DS 5 2SK3322 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 150 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 4.0 A IAS - Single Avalanche Current - A 10 IAS = 4.0 A Energy Derating Factor - % 100 80 60 40 20 0 25 EAS =1 0.7 mJ 1.0 RG = 25 Ω VDD = 150 V VGS = 20 V → 0 V Starting Tch = 25˚C 100 µ 1m 10 m 0.1 10µ 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C 6 Data Sheet D14114EJ2V0DS 2SK3322 ★ PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 3.0±0.3 2) TO-262 1.0±0.5 10.6 MAX. 10.0 TYP. 4.8 MAX. φ 3.6±0.2 5.9 MIN. 4.8 MAX. 1.3±0.2 1.3±0.2 10 TYP. 15.5 MAX. 4 1 2 3 4 123 6.0 MAX. 1.3±0.2 1.3±0.2 12.7 MIN. 12.7 MIN. 8.5±0.2 0.75±0.1 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 3) TO-263 (MP-25ZJ) 10 TYP. 4 1.0±0.5 4) TO-263 (MP-25ZK) 4.8 MAX. 1.3±0.2 No plating 10.0±0.3 7.88 MIN. 4 1.35±0.3 4.45±0.2 1.3±0.2 8.0 TYP. 8.5±0.2 9.15±0.3 15.25±0.5 0.025 to 0.25 1 1.4±0.2 0.7±0.2 2.54 TYP. 2 3 5.7±0.4 R 0.5 TY P. TY P. 2.54 TYP. 0 .8R 0.5±0.2 2.54 0.5± 0.75±0.2 0.2 8o 0 to 1 2 3 0.25 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 2.5 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source 2.54±0.25 Data Sheet D14114EJ2V0DS 7 2SK3322 • T he information in this document is current as of August, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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