2SK3405-ZK

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3405 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3405 2SK3405-ZK 2SK3405-ZJ PACKAGE TO-220AB TO-263(MP-25ZK) TO-263(MP-25ZJ) FEATURES • 4.5-V drive available • Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V) • Built-in gate protection diode • Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C ) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±48 ±192 1.5 50 150 −55 to +150 V V A A W W °C °C Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14639EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark # shows major revised points. © 1999, 2000 2SK3405 ELECTRICAL CHARACTERISTICS(TA = 25°C) CHARACTERISTICS Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 10 V ID = 48 A IF = 48 A, VGS = 0 V IF = 48 A, VGS = 0 V di/dt = 100 A/µs TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 24 A VGS = 10 V, ID = 24 A VGS = 4.5 V, ID = 24 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V , ID = 24 A VGS(on) = 10 V RG = 10 Ω 1.5 12.5 6.5 9.9 1800 770 400 21 13 64 25 34 6.6 11 1.0 38 29 9.0 14.0 MIN. TYP. MAX. 10 ±10 2.5 UNIT µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG VDD VDS 90 % VGS VGS Wave Form IG = 2 mA 90 % RL VDD 0 10 % PG. 50 Ω VGS 0 τ τ = 1 µs Duty Cycle ≤ 1 % VDS Wave Form 0 10 % td(on) ton tr td(off) toff tf 2 Data Sheet D14639EJ2V0DS 2SK3405 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 VGS =10 V ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V 7.0 V ID - Drain Current - A 150 100 100 4.5 V 10 Tch = −50˚C −25˚C 25˚C 75˚C 150˚C 50 Pulsed 0 0 1 2 3 1 0.1 1 2 3 4 5 6 VDS - Drain to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 2.5 2.0 1.5 1.0 0.5 0 −50 | yfs | - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V ID = 1 mA 10 Tch = 150˚C 75˚C 25˚C −25˚C −50˚C 1 0 50 100 150 0.1 0.01 0.1 1 10 100 Tch - Channel Temperature - ˚C RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 15 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed ID = 48 A 24 A 10 A 20 10 10 VGS = 10 V 7.0 V 4.5 V 5 0 0 5 10 15 20 0 0.1 1 10 100 1000 VGS - Gate to Source Voltage - V ID - Drain Current - A Data Sheet D14639EJ2V0DS 3 2SK3405 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 18 ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed VGS = 10 V 100 4.5 V 10 1 0V 16 14 12 10 8 6 4 2 0 −50 0 50 100 150 VGS = 4.5 V 7.0 V 10 V 0.1 0.01 0 0.5 1 1.5 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz 100 tf td(on) 10 td(off) Ciss 1000 Coss Crss tr 100 0.1 1 10 100 1 0.1 1 10 VDD = 10 V VGS = 10 V RG = 10 Ω 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 100 A/µs VGS = 0 V ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS 18 ID = 48 A 15 12 9 VGS 6 3 VDS 0 0 10 20 30 40 0 4 VDD = 16 V 10 V 4V 12 VGS - Gate to Source Voltage - V 100 8 10 1 0.1 1 10 100 ISD - Diode Forward Current - A QG - Gate Charge - nC 4 Data Sheet D14639EJ2V0DS 2SK3405 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 20 0 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - ˚C TC - Case Temperature - ˚C # 1000 FORWARD BIAS SAFE OPERATING AREA ID(pulse) ID - Drain Current - A PW 100 d ite ) im 0 V 1 )L on = S( S ID(DC) RD VG (@ Po we r 10 Di ss ipa tio n 10 0µ s 30 0µ 1m s 3m s 10 s m s =1 0µ s Lim ite d DC 1 0.1 TC = 25˚C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W 100 Rth(ch-A) = 83.3˚C/W 10 Rth(ch-C) = 2.5˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D14639EJ2V0DS 5 2SK3405 PACKAGE DRAWINGS (Unit: mm) 1)TO-220AB (MP-25) 3.0±0.3 10.6 MAX. 10.0 4.8 MAX. 2)TO-263 (MP-25ZK) 10.0±0.2 No plating 0.4 8.4 TYP. 4 1.35±0.3 4.45±0.2 1.3±0.2 φ 3.6±0.2 5.9 MIN. 1.3±0.2 8.0 TYP. 15.5 MAX. 9.15±0.2 15.25±0.5 0.025 to 0.25 4 123 6.0 MAX. 12.7 MIN. 1.3±0.2 0.5± 0.7±0.15 2.54 0.2 8o 0 to 0.25 0.75±0.1 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 1 2 3 1.Gate 2.Drain 3.Source 2.5 4.Fin (Drain) 3)TO-263 (MP-25ZJ) EQUIVALENT CIRCUIT (10) 4 4.8 MAX. 1.3±0.2 Drain 1.0±0.5 8.5±0.2 Gate Body Diode 5.7±0.4 1.4±0.2 0.7±0.2 2.54 TYP. 1 2 ( R 0.5 ) 3 2.54 TYP. (0 .8R ) 0.5±0.2 Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Data Sheet D14639EJ2V0DS 2.45±0.25 2SK3405 [MEMO] Data Sheet D14639EJ2V0DS 7 2SK3405 • The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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