2SK3458-ZK

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3458 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply. ORDERING INFORMATION PART NUMBER 2SK3458 2SK3458-S 2SK3458-ZK PACKAGE TO-220AB TO-262 TO-263 FEATURES • Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.0 A) • Avalanche capability ratings • Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 800 ±30 ±6.0 ±24 1.5 100 150 –55 to +150 6.0 66.5 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 ¡ 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14755EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan © 2000 2SK3458 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 450 V VGS = 10 V ID = 6.0 A IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 50 A/ µs TEST CONDITIONS VDS = 800 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 3.0 A VGS = 10 V RG = 10 Ω 2.5 2.0 1.8 1220 170 16 17 7 43 11 25 6 10 1.0 1490 7.5 2.2 MIN. TYP. MAX. 100 ±100 3.5 UNIT µA nA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RG = 10 Ω VGS RL VDD ID 90% 90% ID D Wave Form VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% I 0 10% td(on) ton tr td(off) toff 10% tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D14755EJ1V0DS 2SK3458 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 80 PT - Total Power Dissipation - W 80 60 60 40 40 20 20 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) PW = ID - Drain Current - A 10 10 d ite Lim ID(DC) 10 10 0 1 m s µs µs 1 R n) (o DS m s 30 ms DC Power Dissipation Limited 0.1 1 TC = 25˚C Single Pulse 10 100 VDS - Drain to Source Voltage - V 1000 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W 100 Rth(ch-A) = 83.3˚C/W 10 Rth(ch-C) = 1.25˚C/W 1 0.1 0.01 10 µ Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14755EJ1V0DS 3 2SK3458 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 9 1000 P ulsed V DS = 1 0 V 100 FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 7 6 5 4 3 2 1 0 0 5 10 15 20 VGS = 10 V ID - Drain Current - A 8 10 1 T A = − 50°C − 25°C 25°C 75°C 125°C 150°C 0.1 0.01 0.001 0 5 10 15 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 T A = − 50°C − 25°C 25°C 75°C 125°C 150°C 4.0 VGS(off) – Gate Cut-off Voltage - V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 Tch - Channel Temperature - °C 1 0.1 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1 10 100 V GS = 1 0 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 5 10 15 20 25 VGS - Gate to Source Voltage - V I D = 6 .0 A 3.0 A 1.2 A ID - Drain Current - A 4 Data Sheet D14755EJ1V0DS 2SK3458 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - Ω 5.0 4.5 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 ID = 6 .0 A 3.0 A C iss 1000 100 C oss 10 VGS = 0 V f = 1 MHz 1 0.1 1 10 100 1000 C rss Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 700 600 500 400 300 200 100 0 0.1 1 10 100 0 5 10 15 20 25 ID - Drain Current - A QG - Gate Charge - nC 14 V DD = 4 50 V 300 V 150 V 12 10 8 VGS 6 4 V DS 2 0 VGS - Gate to Source Voltage - V ID = 6 .0 A 100 td(off) td(on) 10 tf tr 1 SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000 100 trr - Reverse Recovery Time - ns ISD - Diode Forward Current - A 10 1000 1 VGS = 1 0 V 100 0.1 0V di/dt = 50 A/ µ s V GS = 0 V 0.01 0 0.5 1 1.5 VSD - Source to Drain Voltage - V Data Sheet D14755EJ1V0DS 10 0.1 1 10 100 IF - Drain Current - A 5 2SK3458 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 SINGLE AVALANCHE ENERGY DERATING FACTOR IAS - Single Avalanche Current - A 100 Energy Derating Factor - % 80 60 40 20 0 10 IAS = 6.0 A EAS = 66.5 mJ VDD = 150 V R G = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C IAS ≤ 6.0 A 1 VDD = 150 V R G = 25 Ω VGS = 20 → 0 V Starting T ch = 25°C 0.1 100 µ 1m 10 m 100 m 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - °C 6 Data Sheet D14755EJ1V0DS 2SK3458 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 3.0±0.3 10.6 MAX. 10.0 TYP. 4.8 MAX. 2) TO-262 (MP-25 Fin Cut) 1.0±0.5 φ 3.6±0.2 5.9 MIN. 4.8 MAX. 1.3±0.2 1.3±0.2 10 TYP. 15.5 MAX. 4 1 2 3 4 123 6.0 MAX. 1.3±0.2 1.3±0.2 12.7 MIN. 12.7 MIN. 8.5±0.2 0.75±0.1 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 3) TO-263 (MP-25ZK) 10.0±0.2 No plating 0.4 8.4 TYP. 4 1.35±0.3 4.45±0.2 1.3±0.2 8.0 TYP. 9.15±0.2 EQUIVALENT CIRCUIT 15.25±0.5 0.025 to 0.25 Drain (D) 2.45±0.25 0.5± 0.7±0.15 2.54 1 2 3 0.2 8o Gate (G) Body Diode 0 to 0.25 1.Gate 2.Drain 3.Source Source (S) 2.5 4.Fin (Drain) Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D14755EJ1V0DS 7 2SK3458 • The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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