2SK3480

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3480 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3480 2SK3480-S 2SK3480-ZJ 2SK3480-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A) • Low Ciss: Ciss = 3600 pF TYP. • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 100 ±20 ±50 ±100 84 1.5 150 –55 to +150 34 116 V V A A W W °C °C A mJ (TO-263, TO-220SMD) (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.48 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15078EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan © 2001 2SK3480 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 80 V VGS = 10 V ID = 50 A IF = 50 A, VGS = 0 V IF = 50 A, VGS = 0 V di/dt = 100 A/µs TEST CONDITIONS VDS = 100 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 25 A VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 25 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 50 V, ID = 25 A VGS = 10 V RG = 0 Ω 1.5 17 2.0 34 25 27 3600 360 190 15 11 68 6.0 74 10 20 1.0 70 180 31 36 MIN. TYP. MAX. 10 ±10 2.5 UNIT µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D15078EJ1V0DS 2SK3480 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 140 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 120 100 80 60 40 20 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 1000 ID - Drain Current - A 100 ID(DC) ID(pulse) 10 1 10 m PW 0 µs = 10 µs 10 d ite0 V) Po DC ms Lim we Lim 1 ) = ite r Di on d ss S( GS ipa RDat V tio ( n s 1 TC = 25˚C Single Pulse 0.1 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W 100 Rth(ch-A) = 83.3˚C/W 10 1 Rth(ch-C) = 1.48˚C/W 0.1 TC = 25˚C Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 0.01 10 µ PW - Pulse Width - s Data Sheet D15078EJ1V0DS 3 2SK3480 FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 ID - Drain Current - A ID - Drain Current - A 100 TA = −40˚C 25˚C 75˚C 150˚C 80 VGS =10 V 60 40 4.5 V 10 1 20 0.1 VDS = 10 V 4 5 1 2 3 0 0 1 2 Pulsed 3 4 5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 100 VDS = 10 V Pulsed 10 TA = 150˚C 75˚C 25˚C −40˚C 30 ID = 50 A 25 A 1 20 0.1 10 0.01 0.01 0.1 0 1 10 100 5 10 15 20 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 4.0 VGS(off) - Gate Cut-off Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA Pulsed 80 3.0 60 2.0 40 VGS = 4.5 V 20 10 V 1.0 0 0.1 1 10 100 0 −50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - ˚C 4 Data Sheet D15078EJ1V0DS 2SK3480 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 70 Pulsed 60 50 40 30 20 10 0 −50 ID = 25 A 0 50 100 150 VGS = 4.5 V 10 V ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed 100 VGS = 10 V 10 0V 1 0.1 0 0.5 1.0 1.5 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss 1000 Coss Crss td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 1000 100 td(off) td(on) 10 tr VDD = 50 V VGS = 10 V RG = 0 Ω 1 0.1 tf 100 10 0.01 VGS = 0 V f = 1 MHz 0.1 1 10 100 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 100 A/ns VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 80 VDD = 80 V 50 V 20 V VGS 6 10 8 VGS - Gate to Source Voltage - V 100 60 40 4 10 20 VDS 0 ID = 83 A 0 20 40 60 80 QG - Gate Charge - nC 2 1 0.1 0 1 10 100 IF - Drain Current - A Data Sheet D15078EJ1V0DS 5 2SK3480 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1000 160 140 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 50 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 34 A IAS - Single Avalanche Current - A Energy Derating Factor - % 120 100 80 60 40 20 0 25 100 IAS = 34 A EAS 10 VDD = 50 V VGS = 20 → 0 V RG = 25 Ω 1 Starting Tch = 25˚C 0.01 0.1 =1 16 mJ 1 10 50 75 100 125 150 L - Inductive Load - mH Starting Tch - Starting Channel Temperature - ˚C 6 Data Sheet D15078EJ1V0DS 2SK3480 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB(MP-25) 3.0±0.3 2) TO-262(MP-25 Fin Cut) 1.0±0.5 10.6 MAX. 10.0 TYP. 4.8 MAX. φ 3.6±0.2 5.9 MIN. 4.8 MAX. 1.3±0.2 1.3±0.2 10 TYP. 15.5 MAX. 4 1 2 3 4 123 6.0 MAX. 1.3±0.2 12.7 MIN. 1.3±0.2 12.7 MIN. 8.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 2.8±0.2 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-263 (MP-25ZJ) 10 TYP. 4 1.0±0.5 8.5±0.2 4) TO-220SMD(MP-25Z) 4.8 MAX. 1.3±0.2 4 1.0±0.5 Note 10 TYP. 4.8 MAX. 1.3±0.2 1 1.4±0.2 0.7±0.2 2.54 TYP. 2 3 1 TY P. 2 3 1.1±0.4 5.7±0.4 R 0.5 2.54 TYP. 0.8 R P TY . 1.4±0.2 0.5±0.2 0.75±0.3 2.54 TYP. P. TY P. .5R TY 0 .8R 2.54 TYP. 0 3.0±0.5 8.5±0.2 0.5±0.2 2.8±0.2 EQUIVALENT CIRCUIT Drain Note This package is produced only in Japan. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Body Diode Gate Protection Diode Source Data Sheet D15078EJ1V0DS 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 7 2SK3480 • The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest p ublications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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