2SK3740-ZK

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3740 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3740 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for high voltage applications such as lamp drive, DC/DC converter, and actuator driver. ORDERING INFORMATION PART NUMBER 2SK3740-ZK PACKAGE TO-263 (MP-25ZK) (TO-263) FEATURES • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 160 mΩ MAX. (VGS = 10 V, ID = 10 A) • Low gate charge QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A) • Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 250 ±30 ±20 ±60 1.5 100 150 –55 to +150 20 40 V V A A W W °C °C A mJ Total Power Dissipation Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16913EJ1V0DS00 (1st edition) Date Published November 2003 NS CP(K) Printed in Japan 2003 2SK3740 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 250 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 125 V, ID = 10 A VGS = 10 V RG = 0 Ω MIN. TYP. MAX. 10 ±10 UNIT µA µA V S 2.5 7.0 3.5 15 0.12 1720 330 170 17 17 49 9 4.5 Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note 0.16 Ω pF pF pF ns ns ns ns nC nC nC V ns VDD = 200 V VGS = 10 V ID = 2 0 A IF = 20 A, VGS = 0 V IF = 20 A, VGS = 0 V di/dt = 100 A/µs 47 7 25 0.91 210 1.4 VF(S-D) trr Qrr µC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V BVDSS VDS VGS 0 τ Starting Tch τ = 1 µs Duty Cycle ≤ 1% ID Wave Form TEST CIRCUIT 2 SWITCHING TIME L VDD PG. D.U.T. RL VGS VGS Wave Form 50 Ω RG 0 10% VGS 90% VDD ID 90% 90% IAS ID VDD ID 0 10% 10% td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA 50 Ω RL VDD PG. 2 Data Sheet D16913EJ1V0DS 2SK3740 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C PT - Total Power Dissipation - W 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(DC) PW = 100 µｓ ID - Drain Current - A 10 ID(pulse) 1 RDS(on) Limited (at VGS = 10 V) Power Dissipation Limited 1 ms 10 ms 0.1 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W Rth(ch-A) = 83.3°C/W 100 10 1 0.1 0.01 0.001 100 µ Rth(ch-C) = 1.25°C/W 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16913EJ1V0DS 3 2SK3740 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 70 60 ID - Drain Current - A 100 VGS = 10 V Pulsed ID - Drain Current - A 10 1 0.1 0.01 0.001 0.0001 VDS = 10 V Pulsed 50 40 30 20 10 0 0 5 10 15 20 25 30 35 40 VDS - Drain to Source Voltage - V TA = 150°C 125°C 75°C 25°C −40°C 0 1 2 3 4 5 6 7 8 9 10 11 12 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 4.5 4 3.5 3 2.5 2 -50 -25 0 25 50 VDS = 10 V ID = 1.0 mA 100 V DS = 10 V Pulsed 10 1 TA = −40°C 25°C 75°C 125°C 150°C 0.1 1 10 100 0.1 75 100 125 150 175 0.01 0.01 Tch - Channel Temperature - °C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 500 450 400 350 300 250 200 150 100 50 0 1 10 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 400 350 300 250 200 150 100 50 0 3 4 5 6 7 8 9 10 11 12 VGS - Gate to Source Voltage - V VGS = 10 V Pulsed Pulsed ID = 20 A 10 A 4A 100 4 Data Sheet D16913EJ1V0DS 2SK3740 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 350 300 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 175 Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 10000 VGS = 10 V Pulsed V GS = 0 V f = 1.0 MHz Ciss 1000 ID = 20 A 10 A 100 Cr ss 10 0.1 1 10 100 Coss 1000 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 350 VDD = 125 V VGS = 10 V RG = 0 Ω 300 250 200 150 100 50 0 VDS VGS VDD = 200 V 125 V 50 V 12 10 8 6 4 2 0 0 10 20 30 40 50 QG - Gate Charge - nC 100 td(on) 10 tr td(off) tf 1 0.1 1 10 100 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 trr - Reverse Recovery Time - ns 1000 Pulsed IF - Diode Forward Current - A V GS = 0 V di/dt = 100 A/µs 10 VGS = 10 V 1 0V 0.1 100 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 10 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D16913EJ1V0DS 5 VGS - Gate to Source Voltage - V ID = 20 A 14 2SK3740 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 IAS - Single Avalanche Current - A Energy Derating Factor - % 100 80 60 40 20 0 IAS = 20 A VDD = 125 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 20 A 10 V DD = 125 V RG = 25 Ω V GS = 20 → 0 V Starting Tch = 25°C 1 0.01 0.1 EAS = 40 mJ 1 10 25 50 75 100 125 150 L - Inductive Load - mH Starting Tch - Starting Channel Temperature - °C 6 Data Sheet D16913EJ1V0DS 2SK3740 PACKAGE DRAWING (Unit: mm) TO-263 (MP-25ZK) 10.0±0.3 No plating 7.88 MIN. 4 1.35±0.3 4.45±0.2 1.3±0.2 8.0 TYP. 9.15±0.3 15.25±0.5 0.025 to 0.25 0.5± 0.75±0.2 2.54 1 2 3 0.2 8o 0 to 0.25 1.Gate 2.Drain 3.Source 2.5 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2.54±0.25 Data Sheet D16913EJ1V0DS 7 2SK3740 • T he information in this document is current as of November, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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