2SK3901-ZK

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3901 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3901-ZK PACKAGE TO-263 (MP-25ZK) FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low C iss: C iss = 1950 pF TYP. • Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±60 ±150 64 1.5 150 −55 to +150 68 26 68 V V A A W W °C °C mJ A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. RG = 25 Ω, Tch(peak) ≤ 150°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17176EJ1V0DS00 (1st edition) Date Published May 2004 NS CP(K) Printed in Japan 2004 2SK3901 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 30 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 30 A VGS = 10 V RG = 0 Ω MIN. TYP. MAX. 10 ±10 UNIT µA µA V S 1.5 18 2.0 36 10.3 12.1 1950 380 150 12 6 48 5.0 2.5 Drain to Source On-state Resistance 13 16.5 mΩ mΩ pF pF pF ns ns ns ns nC nC nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 48 V VGS = 10 V ID = 60 A IF = 60 A, VGS = 0 V IF = 60 A, VGS = 0 V di/dt = 100 A/µs 40 7.5 10.0 0.96 32 45 1.5 V ns nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RL VDD VGS VGS Wave Form 0 10% VGS 90% VDS 90% 90% 10% 10% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D17176EJ1V0DS 2SK3901 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 80 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 RDS(on) Limited (at VGS = 10 V) ID(pulse) = 150 A 100 µs TC - Case Temperature - °C ID - Drain Current - A 100 ID(DC) = 60 A 10 Power Dissipation Limited 1 ms 1 TC = 25°C Single pulse 10 ms 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W 100 Rth(ch-A) = 83.3°CW 10 Rth(ch-C) = 1.94°C/W 1 Single pulse 0.1 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D17176EJ1V0DS 3 2SK3901 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 FORWARD TRANSFER CHARACTERISTICS 1000 100 ID - Drain Current - A 150 VGS = 10 V ID - Drain Current - A 10 1 0.1 0.01 100 TA = 150°C 75°C 25°C −55°C 4.5 V 50 Pulsed 0 0 1 2 3 4 5 VDS = 10 V Pulsed 1 2 3 4 5 0.001 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed 3 VGS(off) - Gate Cut-off Voltage - V 2.5 2 1.5 1 0.5 0 -75 -25 25 75 VDS = 10 V ID = 1 m A 10 TA = 150°C 75°C 25°C −55°C 1 0.1 0.1 1 10 100 125 175 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 Pulsed 30 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 ID = 3 0 A Pulsed 30 20 VGS = 4.5 V 10 10 V RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 20 10 0 1 10 100 1000 0 0 2 4 6 8 10 12 14 16 18 20 ID - Drain Current - A VGS - Gate to Source Voltage - V 4 Data Sheet D17176EJ1V0DS 2SK3901 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 30 25 20 15 10 5 0 -75 -25 25 75 125 175 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz Ciss Coss 1000 VGS = 4.5 V 10 V 100 Crss ID = 3 0 A Pulsed 10 0.1 1 10 100 VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 60 100 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns td(off) 50 40 30 20 10 0 td(on) 10 tf VDD = 30 V VGS = 10 V RG = 0 Ω 1 0.1 1 10 100 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE VDD = 48 V 30 V 12 V 10 8 6 tr VGS 4 2 0 VDS 0 10 20 30 40 50 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 IF - Diode Forward Current - A Pulsed VGS = 10 V trr - Reverse Recovery Time - ns 1000 di/dt = 100 A/µ s VGS = 0 V 100 100 10 0V 10 1 0.1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 1 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D17176EJ1V0DS 5 VGS - Gate to Source Voltage - V ID = 60 A 12 2SK3901 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1000 100 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 30 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 26 A IAS - Single Avalanche Current - A Energy Derating Factor - % 80 60 40 20 0 100 IAS = 26 A EAS = 68 mJ 10 VDD = 30 V R G = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 1 10 µ 100 µ 1m 10 m 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - °C 6 Data Sheet D17176EJ1V0DS 2SK3901 PACKAGE DRAWING (Unit: mm) TO-263 (MP-25ZK) 10.0±0.3 No plating 7.88 MIN. 4 1.35±0.3 4.45±0.2 1.3±0.2 8.0 TYP. 9.15±0.3 15.25±0.5 0.025 to 0.25 0.5± 0.75±0.2 2.54 1 2 3 0.2 8o 0 to 0.25 1.Gate 2.Drain 3.Source 2.5 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2.54±0.25 Data Sheet D17176EJ1V0DS 7 2SK3901 • T he information in this document is current as of May, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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